Pixel Structure with Connection Electrodes for Low Contact Resistance
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Solution Overview
Problem
High contact resistance between the source electrode/drain electrode and the oxide semiconductor channel layer in thin film transistor devices reduces the efficiency of oxide semiconductor thin film transistor devices, despite their high electron mobility.
Innovation Solution
A pixel structure is designed with connection electrodes that electrically connect the source electrode/drain electrode to the oxide semiconductor channel layer, avoiding direct contact and improving device characteristics by using a substrate, thin film transistor device, passivation layers, and specific contact holes to facilitate electrical connections.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the source electrode/drain electrode directly contacts the oxide semiconductor channel layer, then the device structure is simple, but the contact resistance is high which reduces device efficiency
Solution Approach 1:
The patent introduces connection electrodes as intermediary components between the source/drain electrodes and the oxide semiconductor channel layer. These connection electrodes are disposed on the substrate with the oxide semiconductor channel layer having two opposite sides partially overlapping the top surfaces of the connection electrodes, creating an indirect electrical connection that reduces contact resistance while maintaining reasonable structural complexity.
2Reliability
If connection electrodes are introduced to reduce contact resistance, then the electrical connection is improved, but the device structure becomes more complex
Solution Approach 1:
The patent merges the connection electrodes with the source/drain electrode system by having the source electrode electrically connected to the first connection electrode through a first contact hole, and the drain electrode electrically connected to the second connection electrode through a second contact hole. This integration approach improves electrical connection while minimizing the increase in structural complexity.
3Ease of manufacture
If the oxide semiconductor channel layer directly contacts the source/drain electrode, then the manufacturing process is simple, but the contact resistance reduces device performance
Solution Approach 1:
The patent implements preliminary action by pre-disposing the connection electrodes on the substrate before forming the oxide semiconductor channel layer. The connection electrodes are positioned such that the oxide semiconductor channel layer can be formed with two opposite sides partially overlapping the top surfaces of the connection electrodes, establishing low-resistance electrical connections early in the manufacturing process.
Data Source
AI summary
A pixel structure includes a thin film transistor device. The thin film transistor device includes a first connection electrode, a second connection electrode, an oxide semiconductor channel layer, a gate insulation layer, a gate electrode, a dielectric layer, a source electrode and a drain electrode. The oxide semiconductor channel layer at least partially covers a top surface of the first connection electrode and a top surface of the second connection electrode. The gate electrode is disposed on the gate insulation layer. The dielectric layer is disposed on the gate electrode and the gate insulation layer. The gate insulation layer and the dielectric layer have a first contact hole at least partially exposing the top surface of the first connection electrode and a second contact hole at least partially exposing the top surface of the second connection electrode. The source electrode is electrically connected to the first connection electrode via the first contact hole, and the drain electrode is electrically connected to the second connection electrode via the second contact hole.