Pixel Switching Transistor Leakage Current Reduction

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Solution Overview

Problem

In display devices, a leakage current in pixels can occur due to transistor characteristics, leading to unstable gate voltages and inadequate luminance expression.

Innovation Solution

A pixel structure is implemented with a light emitting element, a driving transistor, and a switching transistor. The switching transistor includes an active layer with conductive regions and channel regions, and a conductive pattern is disposed to overlap the common conductive region, effectively reducing or preventing leakage currents.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional switching transistor structure is used, then the device complexity is low, but leakage current occurs causing unstable gate voltage

Engineering Contradiction:
Improvegate voltage stabilityVSAvoidtransistor structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The switching transistor is divided into multiple sub-transistors (first sub-transistor and second sub-transistor) connected in series. Each sub-transistor has its own conductive regions and channel region, allowing independent control and reducing overall leakage current while maintaining manageable structural complexity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The common conductive region is nested within the active layer and shared by both sub-transistors. This nested structure allows the common conductive region to serve dual purposes as both drain for one sub-transistor and source for the other, reducing total device complexity while improving reliability

Inventive Principle:
Principle #7Nested doll (Nesting)

2Ease of manufacture

If the switching transistor structure is simplified, then the manufacturing is easier, but leakage current cannot be effectively reduced

Engineering Contradiction:
Improvetransistor fabrication easeVSAvoidleakage current
Core Design Contradiction:
Ease of manufactureVSObject-generated harmful factors

Solution Approach 1:

The conductive pattern is specifically positioned to overlap only with the common conductive region of the switching transistor, not with other regions. This localized approach targets the specific area where leakage occurs, effectively reducing harmful leakage current while maintaining ease of manufacture through precise but simple patterning

Inventive Principle:
Principle #3Local quality

3Object-generated harmful factors

If a conductive pattern is added to overlap the common conductive region, then leakage current is reduced, but the device complexity increases

Engineering Contradiction:
Improveleakage current reductionVSAvoidpixel structure complexity
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

The conductive pattern is merged with the existing pixel structure by integrating it into the active layer formation process. The conductive pattern becomes part of the overall transistor architecture rather than a separate added component, reducing the perceived complexity while still achieving leakage current reduction

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS12302717B2Pixel and display device having the same
Publication Date: 2025.05.13 SAMSUNG DISPLAY CO LTD
  • US12302717B2 patent drawing
  • US12302717B2 patent drawing
  • US12302717B2 patent drawing

AI summary

A display device includes pixels at least one of which includes a light emitting element connected between a first power source and a second power source, a first transistor connected between the first power source and the light emitting element and controlling a driving current flowing through the light emitting element in response to a voltage of a first node, a switching transistor connected to the first node and including and active layer that includes first and second conductive regions spaced apart from each other, first and second channel regions disposed between the first and second conductive regions, and a common conductive region disposed between the first and second channel regions, and a conductive pattern overlapping the active layer to face the common conductive region.