Pixel Driving TFT With Dual Work-Function Sub-Gates

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Solution Overview

Problem

The complexity of forming pixel driving circuits in each pixel area of display apparatuses leads to deteriorated process efficiency and image quality due to differences in the electrical characteristics of the pixel driving circuits.

Innovation Solution

A display apparatus with a pixel driving circuit that includes a thin film transistor with a gate comprising a first sub-gate and a second sub-gate, where the second sub-gate has a higher work-function than the first sub-gate, and a semiconductor pattern with parallel sub-channels to improve the driving current and reliability of the pixel driving circuit.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If a pixel driving circuit is formed in each pixel area with a single gate structure, then the process is simpler, but the driving current is insufficient and image quality deteriorates

Engineering Contradiction:
Improvedriving currentVSAvoidgate structure complexity
Core Design Contradiction:
PowerVSDevice complexity

Solution Approach 1:

The gate electrode is divided into multiple sub-gates (first sub-gate, second sub-gate, third sub-gate) with different work functions. Each sub-gate independently controls a corresponding sub-channel region, allowing differentiated electrical characteristics across the channel to enhance driving current while maintaining a planar structure that simplifies manufacturing.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the gate electrode are assigned different work functions (first sub-gate with lower work function, second sub-gate with intermediate work function, third sub-gate with higher work function) to create localized electrical characteristics. This enables each sub-channel region to have optimized charge carrier properties, improving overall transistor performance and driving current without increasing structural complexity.

Inventive Principle:
Principle #3Local quality

2Power

If the channel region length is reduced to increase driving current, then the driving current increases, but the transistor control capability deteriorates

Engineering Contradiction:
Improvedriving currentVSAvoidtransistor control capability
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The channel is segmented into multiple sub-channel regions (first, second, third sub-channels) with different gate control characteristics. This segmentation allows the effective channel length to be maintained for control capability while the differentiated work functions enhance the driving current through improved charge carrier injection and transport in each region.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The work function parameter of the gate electrode is varied across different sub-gates to optimize the electrical characteristics of each sub-channel region. By changing the work function parameter rather than the physical dimensions, the driving current is enhanced while the channel length and transistor control capability are preserved.

Inventive Principle:
Principle #35Parameter changes

3Reliability

If different thin film transistors are used for driving and switching functions, then the electrical characteristics are optimized, but the manufacturing process becomes complicated

Engineering Contradiction:
Improveelectrical characteristicsVSAvoidprocess complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The gate electrode is segmented into multiple sub-gates with different work functions within a single thin film transistor structure. This segmentation enables the transistor to exhibit different electrical characteristics in different regions, allowing it to perform both driving and switching functions with optimized characteristics, while maintaining a unified structure that simplifies the manufacturing process.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

A single thin film transistor with a multi-sub-gate structure is designed to perform multiple functions (driving and switching) that traditionally required different transistor types. The different sub-gate work functions enable the same transistor structure to exhibit diverse electrical characteristics, reducing process complexity while maintaining optimized performance.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enhances the reliability and efficiency of the pixel driving circuit by increasing the driving current without reducing the length of the channel region, thereby improving image quality and process efficiency.

Implementation Method 1

the second sub-gate overlapping the second sub-channel has a work-function greater than the first sub-gate overlapping the first sub-channel

Methodology Applied
Scientific EffectWork-function difference:

Implementation Method 2

An electric field applied to the first sub-channel by the first sub-gate is different from an electric field applied to the second sub-channel by the second sub-gate

Methodology Applied
Scientific EffectElectric field: Electric Field

Data Source

PatentUS20250192123A1Display apparatus having pixel driving circuit
Publication Date: 2025.06.12 LG DISPLAY CO LTD
  • US20250192123A1 patent drawing
  • US20250192123A1 patent drawing
  • US20250192123A1 patent drawing

AI summary

A display apparatus includes a pixel driving circuit including a thin film transistor; and a light-emitting device electrically connected to the pixel driving circuit, wherein a gate of the thin film transistor includes a first sub-gate and a second sub-gate electrically connected to the first sub-gate, wherein the thin film transistor has a semiconductor pattern that includes a first sub-channel and a second sub-channel, which are disposed parallel to each other between a drain region and a source region, and wherein the second sub-gate overlapping the second sub-channel has a work-function greater than the first sub-gate overlapping the first sub-channel, thus increasing a driving current and improving reliability without decreasing a threshold voltage.