Pixelated Detector Macropixel Readout for EBSD Speed

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Solution Overview

Problem

Current CMOS image sensors used in Electron BackScatter Diffraction (EBSD) and Transmission Kikuchi Diffraction (TKD) measurements are limited by slow data acquisition rates, requiring dedicated diodes and additional mechanics, which hinder efficient preliminary image capture and orientation mapping.

Innovation Solution

A pixelated detector with a semiconductor substrate chip and a detector chip, where detector pixels are interconnected via conducting grids to form macropixels, enabling a fast readout mode while maintaining conventional imaging capabilities, allowing for increased sensitivity and faster data acquisition without sacrificing signal-to-noise ratio.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If detector pixels are interconnected via conducting grids to form macropixels for fast readout, then data acquisition speed is improved, but signal-to-noise ratio may deteriorate

Engineering Contradiction:
Improvedata acquisition speedVSAvoidsignal-to-noise ratio
Core Design Contradiction:
ProductivityVSMeasurement precision

Solution Approach 1:

Multiple detector pixels are interconnected via conducting grids to form macropixels, merging their detection capabilities. This allows simultaneous readout of multiple pixels through fewer channels, achieving fast readout mode with up to 81 times faster data acquisition while maintaining signal-to-noise ratio through the combined signal from multiple pixels

Inventive Principle:
Principle #5Merging (Combining)

2Productivity

If dedicated diodes are used for preliminary image capture, then imaging speed is improved, but device complexity increases

Engineering Contradiction:
Improveimaging speedVSAvoiddevice complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The detector pixels serve dual purposes: they can operate individually for conventional imaging mode or be interconnected to form macropixels for fast readout mode. This eliminates the need for dedicated diodes and additional mechanics, reducing device complexity while maintaining the capability for both fast preliminary image capture and conventional imaging

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The detector can dynamically switch between two operational modes: conventional imaging mode with individual pixel readout and fast readout mode with macropixel formation. This dynamic reconfiguration allows the same hardware to adapt to different measurement requirements without adding permanent dedicated components

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables up to 81 times faster data acquisition in fast readout mode compared to conventional imaging, while maintaining similar signal-to-noise ratio, facilitating efficient preliminary image capture and orientation mapping in EBSD and TKD applications.

Implementation Method 1

Each sensor pixel of the plurality of sensor pixels is configured as a photodiode, for converting incident radiation into electrical charges

Methodology Applied
Scientific EffectPhotoelectric effect: Photoelectric Effect

Data Source

PatentEP3605044B1Detector, methods for operating a detector and detector pixel circuit
Publication Date: 2023.07.26 BRUKER NANO INC
  • EP3605044B1 patent drawingFigure 1~2
  • EP3605044B1 patent drawingFigure 3~4
  • EP3605044B1 patent drawingFigure 5~6

AI summary

The present invention relates to a pixelated sensor (100) comprising a semiconductor substrate chip (10) with a plurality of sensor pixels (11) and a detector chip (20) with a plurality of detector pixels (21). Therein, each of the plurality of sensor pixels (11) is configured as a photodiode and is electrically connected to an input node (22) of one of the detector pixels (21). Each of the detector pixels (21) is configured to receive a sensor input from the connected sensor pixel (11), to convert the sensor input into a detector output and to output the detector output to an analog to digital converter (40). According to the invention, the detector chip (20) further comprises a plurality of macropixels (30), wherein each macropixel (30) is formed by a subset of detector pixels (21) that are interconnected by at least one conducting grid (50), wherein each detector pixel (21) of the subset is configured to be switchable connected to the at least one conducting grid (50). The invention further relates to a detector pixel circuit (70) for a detector chip (20) of a pixelated detector (100) of the invention and to methods for operating a pixelated detector (100) according to the invention.