Pixelated Radiation Detector Assembly for Reduced Charge Sharing
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Solution Overview
Problem
Existing radiation detectors face challenges in achieving high spatial resolution while maintaining efficient radiation absorption, particularly in semiconductor detectors where charge carriers are shared among multiple pixels, leading to reduced accuracy in radiation imaging.
Innovation Solution
The method involves attaching multiple radiation detection chips with CdZnTe absorption layers to a substrate, each with discrete electrodes and electrical contacts, and filling gaps with insulating materials, allowing for precise charge carrier collection and improved pixel-specific detection, thereby enhancing radiation absorption and spatial resolution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If a scintillator is used to absorb radiation and emit visible light, then radiation absorption efficiency is improved, but spatial resolution deteriorates due to light spreading and scattering
Solution Approach 1:
The detector is divided into multiple discrete pixels, with each pixel being a separate semiconductor element that independently collects charge carriers. This segmentation prevents charge sharing between adjacent pixels and maintains high spatial resolution while achieving adequate radiation absorption through the array configuration
Solution Approach 2:
The patent replaces the optical detection mechanism (scintillators converting radiation to light) with a direct electrical detection mechanism (semiconductor detectors generating charge carriers). This substitution eliminates the light spreading and scattering problem inherent in scintillator-based systems, achieving both high spatial resolution and efficient radiation absorption
2Manufacturing precision
If scintillator thickness is reduced to improve spatial resolution, then spatial resolution is improved, but radiation absorption efficiency deteriorates
Solution Approach 1:
The detector array is segmented into multiple pixels, allowing each pixel to be optimized for thin thickness to maintain high spatial resolution. The collective array of thin pixels achieves adequate overall radiation absorption through increased pixel density and area coverage
Solution Approach 2:
The patent changes the detection parameter from optical signal (light) to electrical signal (charge carriers). This parameter change allows thin semiconductor pixels to efficiently detect radiation directly through charge carrier generation, achieving both thin thickness for high resolution and efficient detection through direct conversion
3Manufacturing precision
If multiple chips are attached to a substrate with discrete electrodes, then spatial resolution and charge carrier collection accuracy are improved, but device complexity increases
Solution Approach 1:
The detector is segmented into multiple independent pixel chips, each with its own charge carrier collection electrodes. This segmentation enables precise spatial resolution by assigning each pixel a dedicated collection region, while the modular chip architecture manages complexity through standardized repeating units
Solution Approach 2:
Multiple pixel chips are merged onto a single substrate with integrated electrode connections. This merging approach consolidates the complex multi-pixel structure into a unified device while maintaining the individual pixel performance characteristics, managing complexity through systematic integration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables efficient radiation detection with high spatial resolution, as charge carriers generated by a radiation particle are predominantly collected by the intended pixel, reducing sharing and improving the accuracy of radiation imaging applications.
Implementation Method 1
A semiconductor radiation detector may include a semiconductor layer that absorbs radiation in wavelengths of interest. When a radiation particle is absorbed in the semiconductor layer, multiple charge carriers (e.g., electrons and holes) are generated
Implementation Method 2
When a radiation particle is absorbed in the semiconductor layer, multiple charge carriers (e.g., electrons and holes) are generated and swept under an electric field towards electrical contacts on the semiconductor layer
Data Source
AI summary
Disclosed herein is a method comprising: attaching a plurality of chips to a substrate, wherein each of the chips comprises only one pixel configured to detect radiation. Disclosed herein is a method comprising: attaching a wafer to a substrate, wherein the substrate comprises discrete electrodes, wherein the wafer comprises a radiation absorption layer and a plurality of electrical contacts, wherein each of the electrical contacts is connected to at least one of the discrete electrodes; identifying a defective area of the wafer; replacing a portion of the wafer with a chip configured to absorb radiation, the portion comprising the defective area.