Planar Aluminum Capacitor Stacks for High-Density Package Embedding

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Solution Overview

Problem

Existing capacitors face challenges in achieving high capacitance densities and efficient electrical isolation in integrated circuits, particularly in semiconductor packages and circuits, while maintaining a compact form factor.

Innovation Solution

The development of high-capacitance capacitors using modified aluminum foil electrodes with conformal aluminum oxide dielectric layers and conductive materials, arranged in arrays or stacked configurations, allowing for high surface area and electrical isolation of individual capacitors, with optional shared or discrete anodes/cathodes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If traditional cylindrical rolled capacitor structures are used, then high surface area per unit volume is achieved, but device complexity and difficulty of integration into semiconductor packages increases

Engineering Contradiction:
Improvecapacitor volumeVSAvoidcapacitor structure complexity
Core Design Contradiction:
Volume of moving objectVSDevice complexity

Solution Approach 1:

The capacitor is divided into multiple discrete planar layers (anode, dielectric, cathode) that can be independently fabricated and then stacked together. This segmentation allows each layer to be optimized separately and simplifies integration into semiconductor packages compared to monolithic cylindrical structures.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention transitions from three-dimensional cylindrical rolled structures to two-dimensional planar layers that are stacked in the vertical dimension. This dimensional change enables easier fabrication using standard semiconductor planar processing techniques and simplifies integration while maintaining high surface area through the stacking arrangement.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Quantity of substance

If deep trenches in silicon are used to increase surface area, then capacitance density improves, but manufacturing precision requirements and device complexity increase

Engineering Contradiction:
Improvecapacitance densityVSAvoidtrench fabrication precision
Core Design Contradiction:
Quantity of substanceVSManufacturing precision

Solution Approach 1:

Instead of creating single deep trenches requiring high precision, the capacitor is segmented into multiple shallow planar layers stacked together. Each layer can be fabricated with standard precision techniques, and the cumulative effect of multiple layers achieves the desired total capacitance density without requiring ultra-precise deep trench fabrication.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The solution moves from increasing surface area vertically through deep trenches to increasing surface area through horizontal stacking of multiple planar layers. This dimensional approach achieves high capacitance density using standard planar fabrication precision rather than requiring precision deep trench etching.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Quantity of substance

If multiple individual capacitors are integrated in a single device layer, then capacitance density and electrical isolation improve, but device complexity increases

Engineering Contradiction:
Improvecapacitance densityVSAvoidmulti-terminal device complexity
Core Design Contradiction:
Quantity of substanceVSDevice complexity

Solution Approach 1:

The device is segmented into multiple individually addressable capacitor units within a single layer, each with its own terminals. This segmentation enables high total capacitance density while maintaining electrical isolation between units, and the modular structure actually simplifies integration compared to monolithic designs.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Multiple individual capacitor units are merged into a single integrated device layer with shared fabrication processes. This combining approach achieves high capacitance density in a compact footprint while using standardized planar fabrication techniques, reducing overall device complexity despite the multi-terminal configuration.

Inventive Principle:
Principle #5Merging (Combining)

4Quantity of substance

If high surface area electrodes with thin dielectric layers are used, then capacitance density improves, but reliability concerns arise from dielectric breakdown risk

Engineering Contradiction:
Improvecapacitance densityVSAvoiddielectric breakdown resistance
Core Design Contradiction:
Quantity of substanceVSReliability

Solution Approach 1:

The total dielectric thickness is segmented into multiple thinner dielectric layers stacked in series, with each layer providing electrical isolation. This segmentation allows each thin dielectric layer to operate within safe electric field limits while achieving high total capacitance density through the stacked configuration.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The solution transitions from using a single thick dielectric layer to multiple thin dielectric layers stacked in the vertical dimension. This dimensional approach maintains reliability by keeping each individual dielectric layer thin enough to avoid breakdown while achieving high capacitance density through the cumulative effect of multiple layers.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

These capacitors achieve capacitance densities of 0.1 μF/mm² to 25 μF/mm², enabling efficient energy storage and filtering in integrated circuits with reduced footprint, suitable for semiconductor packages and surface-mounted devices.

Implementation Method 1

a dielectric layer conformal with the first electrode, the dielectric layer comprising aluminum oxide

Methodology Applied
Scientific EffectAnodizing: Anodising

Data Source

PatentUS12500040B2Planar high-density aluminum capacitors for stacking and embedding
Publication Date: 2025.12.16 SARAS MICRO DEVICES INC
  • US12500040B2 patent drawing
  • US12500040B2 patent drawing
  • US12500040B2 patent drawing

AI summary

Multi-terminal capacitor devices and methods of making multi-terminal capacitor devices are described herein. The multi-terminal capacitor devices may include a plurality of individual capacitors arranged in a single device layer, such as high surface area capacitors. A individual capacitor may include an aluminum foil-based electrode, an aluminum oxide dielectric layer conformal with the aluminum foil-based electrode, and a conductive material electrode, such as a conducting polymer or a conductive ceramic, in conformal contact with the dielectric layer.