Planar Conductive Section Wiring for Dense Semiconductor Interconnects
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Solution Overview
Problem
Conventional semiconductor devices face challenges in achieving higher integration due to the need for multiple conduction paths, which are often cumbersome and limit the density and design freedom of connection wirings.
Innovation Solution
A semiconductor device with a conductive section formed on the substrate obverse face, allowing for finer and denser conduction paths, and conductive bonding between spaced sections, enabling shorter connections and greater design flexibility.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multiple leads are used to constitute conduction paths to the control chip, then the number of control signals can be increased, but the degree of integration of the semiconductor device deteriorates
Solution Approach 1:
The conductive section is formed on the substrate obverse face (a different dimension/plane) instead of using traditional leads extending from the substrate reverse face. This dimensional change allows conduction paths to be routed on the same plane as the control chip, enabling finer lines and higher density connections without increasing device complexity
Solution Approach 2:
The conductive section is divided into multiple sections (first section, second section, etc.) that are spaced apart and can be independently connected to different control signals. This segmentation allows multiple control signals to be accommodated while maintaining a compact integrated structure on the substrate obverse face
2Manufacturing precision
If conduction paths are formed using traditional metal leads, then connection between substrate and control chip is achieved, but the conduction paths cannot be formed of finer lines and in higher density
Solution Approach 1:
Traditional mechanical metal leads are replaced with a conductive section formed by conductive material on the substrate obverse face. This substitution enables the formation of finer lines and higher density conduction paths that can be precisely patterned on the substrate surface, achieving greater manufacturing precision
Solution Approach 2:
The conduction paths are moved from the traditional three-dimensional lead structure to a two-dimensional planar structure on the substrate obverse face. This allows for higher density and finer lines to be achieved through photolithography and other precise patterning techniques
3Reliability
If connection wirings are arranged between spaced sections through a long detour, then electrical connection is achieved, but the conduction path length increases
Solution Approach 1:
The conductive section integrates multiple functions into a single structure on the substrate obverse face. By combining the conduction paths and connection points in a planar configuration, the wiring length is minimized while maintaining reliable electrical connections between spaced sections
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables higher integration and flexibility in designing conduction paths, enhancing the semiconductor device's performance and integration capabilities.
Implementation Method 1
a conductive section wire conductively bonded to the first section and the second section
Data Source
AI summary
A semiconductor device includes a substrate, a conductive section, a sealing resin, and a conductive section wire. The substrate includes a substrate obverse face and a substrate reverse face oriented in opposite directions to each other in a thickness direction. The conductive section is formed of a conductive material and located on the substrate obverse face. The conductive section includes a first section and a second section spaced apart from each other. The sealing resin covers at least a part of the substrate and an entirety of the conductive section. The conductive section wire is conductively bonded to the first section and the second section of the conductive section.


