Planar Conductive Section Layout for Dense Semiconductor Routing
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Solution Overview
Problem
Conventional semiconductor devices face challenges in achieving higher integration due to the increase in the number of conduction paths, which are often constituted by multiple leads, making it difficult to achieve a higher degree of integration.
Innovation Solution
A semiconductor device with a conductive section formed on the substrate obverse face, allowing for finer and denser conduction paths, and a conductive section wire bonded to spaced-apart sections, enabling shorter connections and greater design freedom.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multiple leads are used to constitute conduction paths, then the number of control signals can be increased, but the degree of integration of the semiconductor device decreases
Solution Approach 1:
The conductive section is formed on the substrate obverse face (a two-dimensional plane) rather than using three-dimensional lead structures extending from the substrate. This planar configuration allows multiple conduction paths to be arranged in parallel on the same layer, increasing the number of control signals while maintaining a compact footprint and high degree of integration.
Solution Approach 2:
The conduction paths are extracted from the traditional lead-based three-dimensional structure and reconfigured as planar conductive sections on the substrate surface. This extraction eliminates the need for vertical lead connections and enables direct planar routing, allowing finer and denser conduction paths to be formed.
2Reliability
If conduction paths are formed with traditional lead structures, then connection reliability is maintained, but the conduction paths become longer and integration density decreases
Solution Approach 1:
By transitioning from vertical lead-based conduction paths to horizontal planar conductive sections on the substrate obverse face, the conduction paths are shortened. The wire is conductively bonded to spaced-apart sections of the conductive section, creating direct planar connections that eliminate the need for long vertical lead routes while maintaining connection reliability.
3Device complexity
If finer and denser conduction paths are formed, then the degree of integration increases, but manufacturing precision requirements increase
Solution Approach 1:
The conductive section is formed as an integrated planar structure on the substrate obverse face, combining multiple conduction paths into a unified configuration. The wire is conductively bonded to spaced-apart sections of this integrated conductive section, allowing finer and denser conduction paths to be formed as part of a single manufacturing process rather than requiring separate precision operations for each path.
Data Source
AI summary
A semiconductor device includes a substrate, a conductive section, a sealing resin, and a conductive section wire. The substrate includes a substrate obverse face and a substrate reverse face oriented in opposite directions to each other in a thickness direction. The conductive section is formed of a conductive material and located on the substrate obverse face. The conductive section includes a first section and a second section spaced apart from each other. The sealing resin covers at least a part of the substrate and an entirety of the conductive section. The conductive section wire is conductively bonded to the first section and the second section of the conductive section.