Planar Electronic Device Without 2DEG
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Solution Overview
Problem
Existing planar electronic devices require a two-dimensional electron gas (2DEG) and high-electron mobility materials, limiting material selection and manufacturing methods, and assuming the need for natural depletion regions close to channel sidewalls, which complicates device fabrication and increases costs.
Innovation Solution
Planar electronic devices that do not require a 2DEG, allowing the use of alternative materials and simpler manufacturing methods, including organic materials, and operate based on field-effect principles without natural depletion regions, enabling the use of organic semiconductors and flexible substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a two-dimensional electron gas (2DEG) is used to form planar electronic devices, then device performance and electron mobility are improved, but material selection is limited and manufacturing complexity increases
Solution Approach 1:
The patent extracts the essential function of charge carrier confinement from the complex 2DEG structure. By removing the requirement for sophisticated quantum well structures and lateral potential barriers, the invention achieves planar device functionality using simpler material layers that do not require 2DEG formation, thus reducing manufacturing complexity while maintaining electron transport performance
Solution Approach 2:
The invention changes the fundamental parameter of charge carrier dimensionality from two-dimensional (2DEG) to three-dimensional bulk transport. This parameter change allows the use of conventional semiconductor materials and simpler fabrication processes, eliminating the need for precise quantum confinement structures while still achieving high-speed device operation
2Reliability
If natural depletion regions close to channel sidewalls are assumed, then device functionality is achieved, but fabrication complexity and costs increase
Solution Approach 1:
The patent removes the assumption and requirement for natural depletion regions to form near channel sidewalls. By extracting this requirement, the invention allows for simpler fabrication processes that do not need to create or rely on depletion region formation, reducing fabrication complexity and costs while maintaining device functionality through alternative field-effect mechanisms
Solution Approach 2:
The invention introduces an intermediary insulating layer between the charge carrier substrate and the gate electrode. This insulating layer mediates the field effect, allowing voltage control of channel conductivity without requiring natural depletion regions, thus simplifying fabrication while ensuring reliable device operation
3Speed
If high-electron mobility materials are used, then device speed is improved, but material selection and manufacturing methods are limited
Solution Approach 1:
The patent creates a universal planar device structure that can function with various semiconductor materials without requiring high-electron mobility materials. The insulating layer configuration enables field-effect control in diverse materials including organic semiconductors, inorganic semiconductors, and flexible substrate materials, greatly expanding material selection and manufacturing versatility while maintaining device speed performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, reduces costs, and enables the use of organic materials for planar devices, improving their speed and flexibility, achieving MHz operation frequencies and enabling applications such as high-speed RFID tags and flexible displays.
Implementation Method 1
the conductivity of the channel is dependent upon the potential difference between the areas, wherein the mobile charge carriers can be within at least two modes in each of the three dimensions within the substrate
Data Source
AI summary
An electronic device includes a substrate supporting mobile charge carriers, insulative features formed on the substrate surface to define first and second substrate areas on either side of the insulative features, the first and second substrate areas being connected by an elongate channel defined by the insulative features, the channel providing a charge carrier flow path in the substrate from the first area to the second area, the conductivity between the first and second substrate areas being dependent upon the potential difference between the areas. The mobile charge carriers can be within at least two modes in each of the three dimensions within the substrate. The substrate can be an organic material. The mobile charge carriers can have a mobility within the range 0.01 cm2/Vs to 100 cm2/Vs, and the electronic device may be an RF device. Methods for forming such devices are also described.