Planar Heat Spreader for Low-Profile Semiconductor Shielding
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Solution Overview
Problem
Conventional semiconductor packages with dual-purpose shield and heat spreader devices increase package profile, making them difficult to manufacture and costly, while also failing to efficiently reduce inter-device interference and dissipate heat effectively.
Innovation Solution
A method involving a substrate with a recess and conductive vias, where a first semiconductor die is mounted within the recess and a planar heat spreader with openings is placed over it, allowing a second semiconductor die to be mounted on top, with bond wires connecting through the openings to the vias for electrical connection, and an encapsulant is deposited to form a low-profile dual-purpose shield and heat-dissipation structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If conventional dual-purpose shield and heat spreader devices are used, then heat dissipation and EMI shielding are provided, but package profile increases and manufacturing complexity increases
Solution Approach 1:
The patent transitions from a conventional three-dimensional shield structure to a two-dimensional planar heat spreader. The heat spreader is a flat, planar structure that lies substantially in a plane, reducing the vertical dimension of the package while maintaining heat dissipation functionality through its extended surface area in the horizontal plane.
Solution Approach 2:
The heat spreader is divided into multiple functional segments: a first portion that contacts the semiconductor device for heat absorption, a second portion that extends outward for heat dissipation, and openings that allow bond wires to pass through. This segmentation allows each portion to perform its specific function while maintaining an overall low-profile structure.
2Temperature
If conventional dual-purpose shield and heat spreader devices are used, then heat dissipation and EMI shielding are provided, but manufacturing difficulty increases and cost increases
Solution Approach 1:
The planar heat spreader serves multiple functions simultaneously: it acts as a heat sink, provides EMI shielding through its conductive material, serves as a structural support layer, and enables electrical connections through its integrated openings for bond wires. This multi-functionality eliminates the need for separate shield and heat spreader components, simplifying manufacturing.
Solution Approach 2:
The patent merges the functions of the EMI shield and heat spreader into a single planar structure. The heat spreader is made of electrically conductive material that provides both thermal management and electromagnetic interference shielding in one component, reducing the number of parts and assembly steps required.
3Temperature
If conventional dual-purpose shield and heat spreader devices are used, then heat dissipation and EMI shielding are provided, but inter-device interference reduction is insufficient
Solution Approach 1:
The heat spreader features localized functional zones: the first portion directly contacts the semiconductor device to absorb heat and provide localized EMI shielding, while the second portion extends outward to dissipate heat and provide broader EMI protection. The openings are strategically positioned to allow bond wire passage while maintaining shielding effectiveness in critical areas.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in a low-profile semiconductor device with effective heat dissipation and reduced inter-device interference, simplifying manufacturing and reducing costs by using a planar heat spreader and bond wires for electrical connections.
Implementation Method 1
mounting a planar heat spreader over the substrate and over the first semiconductor die
Implementation Method 2
forming a first plurality of bond wires that extend from the second semiconductor die through the openings in the planar heat spreader to electrically connect to the through conductive vias
Data Source
AI summary
A semiconductor device has a substrate including a recess and a peripheral portion with through conductive vias. A first semiconductor die is mounted over the substrate and within the recess. A planar heat spreader is mounted over the substrate and over the first semiconductor die. The planar heat spreader has openings around a center portion of the planar heat spreader and aligned over the peripheral portion of the substrate. A second semiconductor die is mounted over the center portion of the planar heat spreader. A third semiconductor die is mounted over the second semiconductor die. First and second pluralities of bond wires extend from the second and third semiconductor die, respectively, through the openings in the planar heat spreader to electrically connect to the through conductive vias. An encapsulant is deposited over the substrate and around the planar heat spreader.