Planar Interconnection Layer for Optoelectronic Semiconductor Chips

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing optoelectronic semiconductor chips face challenges in achieving a low-complexity structure that is also ageing-resistant, as complex insulation layers used for electrical contacting are prone to degradation and current leaks over time, leading to potential electrical short circuits.

Innovation Solution

The optoelectronic semiconductor chip incorporates a planar interconnection layer with a first and second electrically conductive contact layer and an insulation layer made of high-specific-resistance material, ensuring a seamless, planar mounting face that maintains stability and prevents electrical shorts, using materials like BCB, silicone resin, and sol-gel materials for insulation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If complex insulation layers are used for electrical contacting, then electrical insulation is achieved, but the structure becomes prone to degradation and current leaks over time

Engineering Contradiction:
Improveageing resistanceVSAvoidinsulation layer complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent extracts the problematic complex insulation layer structure and replaces it with a simplified interconnection layer design. The complex multi-layer insulation structure is removed and substituted with a planar interconnection layer having a mounting face, which maintains electrical insulation functionality while eliminating the complexity that caused degradation and current leaks over time.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent changes the structural parameters of the insulation system by transitioning from a complex multi-layer vertical structure to a planar interconnection layer with a flat mounting face. This parameter change simplifies the structure while maintaining the electrical insulation function, thereby improving ageing resistance by eliminating complex interfaces that are prone to degradation.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If complex insulation layers are used for electrical contacting, then electrical insulation is achieved, but the structure becomes more complex

Engineering Contradiction:
Improveelectrical insulation stabilityVSAvoidinterconnection layer structure
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the electrical insulation function with the interconnection layer structure itself. Instead of using separate complex insulation layers, the interconnection layer is designed with an integrated planar mounting face that provides both mechanical support and electrical insulation. This merging simplifies the overall structure while maintaining insulation stability.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The interconnection layer with its planar mounting face serves multiple functions simultaneously: it provides mechanical support for mounting optoelectronic semiconductor bodies, provides electrical insulation between conductive contact layers, and enables planar assembly. This multi-functionality eliminates the need for separate complex insulation structures.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Reliability

If complex insulation layers are used, then electrical contacting is achieved, but current leaks and electrical short circuits occur over time

Engineering Contradiction:
Improveinsulation integrityVSAvoidcurrent leaks and electrical shorts
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies preliminary anti-action by designing the interconnection layer with a planar mounting face that prevents the formation of defects from the outset. The simplified planar structure eliminates complex interfaces and stress concentration points that would otherwise lead to degradation, current leaks, and electrical shorts during operation, thereby maintaining insulation integrity over time.

Inventive Principle:
Principle #9Preliminary anti-action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution provides a stable and ageing-resistant optoelectronic semiconductor chip with reduced complexity in structure, minimizing the risk of electrical shorts and maintaining insulation integrity over extended operation periods.

Implementation Method 1

an insulation layer which is formed of an electrically insulating material... the insulation layer comprises an electrically insulating material which is capable of electrically insulating the first electrically conductive contact layer from the second electrically conductive contact layer

Methodology Applied
Scientific EffectElectrical insulation: Electrical Resistance

Data Source

PatentUS9589939B2Optoelectronic semiconductor chip
Publication Date: 2017.03.07 OSRAM OLED
  • US9589939B2 patent drawing
  • US9589939B2 patent drawing
  • US9589939B2 patent drawing

AI summary

An optoelectronic semiconductor chip includes an interconnection layer with a first electrically conductive contact layer, a second electrically conductive contact layer and an insulation layer, which is formed of an electrically insulating material. Further, the optoelectronic semiconductor chip includes two optoelectronic semiconductor bodies, each of which include an active region that is intended to generate radiation. The insulation layer is arranged on a top of the second electrically conductive contact layer facing the optoelectronic semiconductor bodies. The first electrically conductive contact layer is arranged on a top of the insulation layer remote from the second electrically conductive contact layer. The optoelectronic semiconductor bodies are interconnected electrically in parallel by the interconnection layer.