Planar Lead Semiconductor Package for Reduced Thickness
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Solution Overview
Problem
Conventional semiconductor devices have a increased dimension in the thickness direction due to the arrangement of leads, semiconductor elements, and conducting wires, which hinders thinning.
Innovation Solution
A semiconductor device design featuring a switching device with a resin portion covering leads and exposing them from one resin surface, allowing for reduced thickness without additional leads on the opposing side of the sealing material, and utilizing a high electron mobility transistor (GaN-HEMT) for efficient electrical functions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If leads, semiconductor element and conducting wires are arranged in a thickness direction of the leads, then electrical connections are established, but the dimension of the semiconductor device in the thickness direction is increased
Solution Approach 1:
The patent transitions from a vertical stacking arrangement (thickness direction) to a planar arrangement where leads are positioned on the same surface as the semiconductor element. The leads extend from the front surface rather than stacking through the thickness, changing the spatial dimension of connection and reducing the thickness dimension of the device.
Solution Approach 2:
The patent extracts the leads from the vertical stacking sequence and positions them on the front surface plane. By separating the lead positioning function from the vertical stack, the design eliminates the need for leads to traverse the full thickness direction, thereby reducing the overall thickness while maintaining electrical connection functionality.
2Reliability
If multiple leads are arranged vertically to connect to the semiconductor element, then electrical connectivity is achieved, but device complexity increases
Solution Approach 1:
The patent merges the lead positions with the front surface plane of the semiconductor device, combining what were previously separate vertical elements into a unified planar arrangement. This integration simplifies the overall structure by eliminating the need for complex vertical stacking and alignment of multiple leads through the thickness direction.
3Object-affected harmful factors
If leads are covered completely by resin for protection, then moisture protection is improved, but leads cannot be exposed for external connection
Solution Approach 1:
The patent applies local quality by selectively exposing only the necessary portions of the leads at the front surface while covering the rest of the lead structure and semiconductor element with resin. This localized approach provides moisture protection where needed while maintaining lead accessibility for external connections at specific points.
Data Source
AI summary
The present disclosure provides a semiconductor device. The semiconductor device includes: a switching device, having a first device surface and a second device surface that face opposite to each other in a thickness direction, and a drain electrode, a source electrode and a gate electrode that are arranged on the first device surface; a first lead, conductively connected to the drain electrode; a second lead, conductively connected to the source electrode; a third lead, conductively connected to the gate electrode; and a resin portion, covering the switching device and a portion of each of the first to the third leads, and having a first resin surface facing the same side as the first device surface and a second resin surface facing the same side as the second device surface. The first to the third leads are exposed from the first resin surface.