Planar Passivation Layers for Fragile Semiconductor Surface Features

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Solution Overview

Problem

Conventional semiconductor device fabrication and processing face challenges due to increased fragility and complexity as functional density increases, leading to higher chances of failures during handling and packaging, particularly at non-planar features where stressors concentrate.

Innovation Solution

The implementation of a planar passivation layer that is formed over non-planar structures to eliminate weak points, providing a uniform, stress-resistant surface by planarizing the overlayable surface of semiconductor devices, which can include protrusions, depressions, and transitions, thereby reducing susceptibility to stressors like compression, moisture, and shear forces.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If functional density is increased to achieve higher device density and lower cost, then production efficiency is improved and costs are reduced, but the semiconductor devices become more fragile and the chance of failures increases

Engineering Contradiction:
Improveproduction efficiencyVSAvoiddevice fragility
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

A planar passivation layer is formed over non-planar structures (protrusions, depressions, transitions) before packaging and handling operations. This layer acts as a cushioning protective barrier that prevents stress concentration at vulnerable non-planar features, thereby reducing device fragility and failure chances during subsequent processing and handling while maintaining high functional density

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

2Device complexity

If functional density is increased to achieve higher device density, then more interconnected devices per chip area are achieved, but the distance between interconnected layers and devices decreases making devices more fragile

Engineering Contradiction:
Improvefunctional densityVSAvoiddevice robustness
Core Design Contradiction:
Device complexityVSStrength

Solution Approach 1:

The passivation layer is selectively applied to protect specific vulnerable regions (non-planar structures such as protrusions, depressions, and transitions) rather than uniformly across the entire device surface. This localized protection approach strengthens the most fragile areas where stressors concentrate, maintaining device robustness despite increased functional density and reduced spacing between interconnected structures

Inventive Principle:
Principle #3Local quality

3Ease of manufacture

If conventional fabrication methods are used without planar passivation, then manufacturing simplicity is maintained, but weak points at non-planar features lead to higher failure rates during handling and packaging

Engineering Contradiction:
Improvefabrication simplicityVSAvoidfailure rate
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

The planar passivation layer is formed as a preliminary protective measure during the fabrication process, before devices undergo handling and packaging operations. This advance protection eliminates weak points at non-planar features, significantly reducing failure rates during subsequent processing steps while adding minimal complexity to the overall manufacturing workflow

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20240355695A1Planar passivation layers
Publication Date: 2024.10.24 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20240355695A1 patent drawing
  • US20240355695A1 patent drawing
  • US20240355695A1 patent drawing

AI summary

A semiconductor device includes: a protruding conductive structure that protrudes to a height from a first surface of the semiconductor device; and a first passivation layer, the first passivation layer overlaying the protruding conductive structure by a first thickness, the first passivation layer overlaying the first surface by a second thickness greater than the first thickness, wherein the first passivation layer is planar at a top surface over the first thickness and the second thickness.