Planar Light-Emitting Transistor Charge Buffer Layer Surface Emission

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Solution Overview

Problem

Conventional planar light-emitting transistors emit light in a linear or strip-shaped form, making it difficult to achieve stable surface light source emission suitable for display applications.

Innovation Solution

Incorporating a charge buffer layer under the source or drain electrode, or between the semiconductor charge transport layer and the light-emitting unit, to redistribute current density and enable uniform surface light source emission.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a planar light-emitting transistor is designed with conventional structure, then device processability and stability are improved, but light emission form becomes line source which is unsuitable for display applications

Engineering Contradiction:
Improvedevice processabilityVSAvoidlight emission form
Core Design Contradiction:
Ease of manufactureVSShape

Solution Approach 1:

The invention transitions the light emission from a one-dimensional line source to a two-dimensional surface source by introducing a charge buffer layer that spreads charge carriers across the channel width, enabling surface light source emission suitable for display applications while maintaining planar device structure

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Shape

If a vertical light-emitting transistor is designed, then surface light source emission is easily realized, but a porous source electrode is required which is difficult to prepare and influences device stability and uniformity

Engineering Contradiction:
Improvelight emission formVSAvoidelectrode preparation
Core Design Contradiction:
ShapeVSEase of manufacture

Solution Approach 1:

Instead of adopting the vertical configuration that requires porous electrodes, the invention inverts the approach by using a planar configuration with a charge buffer layer to achieve surface light source emission, thereby avoiding the manufacturing difficulties of porous electrodes while maintaining the desired emission characteristics

Inventive Principle:
Principle #13The other way round (Inversion)

3Device complexity

If electrons and holes are compounded on one side of a channel and electrode in a planar light-emitting transistor, then device structure is simple, but light emitting occurs in line source form which is unsuitable for display applications

Engineering Contradiction:
Improvedevice structureVSAvoidlight emission form
Core Design Contradiction:
Device complexityVSShape

Solution Approach 1:

The charge buffer layer acts as an intermediary between the charge carriers and the light-emitting materials, redistributing the charge carriers across the channel width to enable uniform surface light source emission without complicating the overall device structure

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The planar light-emitting transistor achieves stable surface light source emission with high aperture ratio, good gate tunability, and flexibility, suitable for wearable devices and display applications.

Implementation Method 1

the light-emitting transistor has the unique advantages of high integration level, simple preparation process and the like, and is considered as an important device element of the next-generation revolutionary display technology

Methodology Applied
Scientific EffectElectroluminescence: Electroluminescence

Data Source

PatentUS20240423011A1Planar light-emitting transistor device capable of surface light source emission, and preparation method therefor and application thereof
Publication Date: 2024.12.19 INST OF CHEM
  • US20240423011A1 patent drawing
  • US20240423011A1 patent drawing
  • US20240423011A1 patent drawing

AI summary

A planar light-emitting transistor device capable of surface light source emission, and a preparation method therefor and an application thereof are provided. The planar light-emitting transistor device has a charge buffer layer inserted between a semiconductor charge transport layer and a light-emitting unit, such that a prepared planar light-emitting transistor can realize stable surface light source emission, thereby effectively overcoming the defect of the emergent light of a traditional planar light-emitting transistor being linear or strip-shaped. The planar light-emitting transistor device capable of surface light source emission has a high integration level, can realize stable surface light source emission, effectively improves the aperture ratio of the transistor device, has a good gate tunable capability, high loop stability and any tunability, and can be easily miniaturized.