Planarization Process Using Double Sputtering Shielding
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Solution Overview
Problem
Conventional planarization processes, such as CMP, face challenges in achieving surface flatness of several nanometers and uniformity, especially when dealing with thick material layers or non-uniform features, leading to inconsistent planarization results.
Innovation Solution
A method involving double sputtering with shielding layers is employed to address the loading effect by first shielding areas with low or high loading conditions, adjusting sputtering parameters to equalize conditions, and then performing uniform second sputtering to achieve a flat surface, utilizing techniques like Ar or N plasma sputtering.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If CMP is used to planarize a thick material layer, then the material layer can be removed, but the surface flatness cannot be controlled within several nanometers
Solution Approach 1:
The planarization process is divided into multiple sputtering steps with shielding layers applied selectively to different regions. This segmentation allows different areas of the substrate to receive different amounts of sputtering, enabling precise control of surface flatness while removing thick material layers uniformly.
Solution Approach 2:
Shielding layers are applied to specific regions with low loading conditions to prevent over-sputtering, while regions with high loading conditions receive full sputtering. This local differentiation ensures that each region receives the appropriate amount of material removal to achieve uniform surface flatness across the entire substrate.
2Manufacturing precision
If planarization is performed on a material layer covering non-uniform features, then the material layer can be processed, but non-uniform fluctuations are formed due to loading effects
Solution Approach 1:
The patent applies shielding layers selectively to regions with low loading conditions (areas with fewer or smaller features) while leaving regions with high loading conditions (areas with more or larger features) exposed. This local differentiation compensates for the loading effect, ensuring uniform sputtering rates across the entire substrate and eliminating non-uniform fluctuations.
Solution Approach 2:
The shielding layers are applied before sputtering to prevent the harmful loading effect from occurring. By blocking the sputtering flux in low-loading regions, the process preemptively prevents the formation of non-uniform fluctuations that would otherwise occur during planarization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively controls surface flatness within several nanometers and ensures uniform planarization across substrates with non-uniform features, improving the consistency of the planarization process.
Implementation Method 1
performing first sputtering on the material layer... performing second sputtering on the material layer to planarize the material layer
Implementation Method 2
utilizing techniques like Ar or N plasma sputtering
Data Source
AI summary
A planarization process, the process including performing first sputtering on a material layer, with an area of the material layer which has a relatively low loading condition for sputtering shielded by a first shielding layer, removing the first shielding layer, and performing second sputtering on the material layer to planarize the material layer.