Plasma Exhaust Treatment for ACL Vacuum Pump Deposit Removal
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Solution Overview
Problem
Hydrogenated amorphous carbon (a-C:H) and hydrocarbon (CXHY) deposited in vacuum pumps during the amorphous carbon layer (ACL) process in semiconductor manufacturing facilities degrade pump performance and reduce the mean time between failures (MTBF), as these substances are not effectively removed from the exhaust gas treatment system.
Innovation Solution
A semiconductor manufacturing facility is equipped with a plasma reactor that decomposes treatment gases like oxygen (O2) and nitrogen trifluoride (NF3) to generate reactive species, which are used to remove hydrogenated amorphous carbon and hydrocarbon deposits in the vacuum pump, preventing their introduction and deterioration of pump performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If vacuum pump is used to discharge residual gas from process chamber, then residual gas is removed from process chamber, but hydrogenated amorphous carbon and hydrocarbon are deposited in vacuum pump causing performance deterioration
Solution Approach 1:
A plasma reactor is introduced as an intermediary device between the process chamber and vacuum pump. The plasma reactor generates reactive species that treat the exhaust gas, converting hydrogenated amorphous carbon and hydrocarbon into removable deposits before they reach the vacuum pump, thus protecting the pump while maintaining its vacuum function
Solution Approach 2:
The harmful deposits of hydrogenated amorphous carbon and hydrocarbon are converted into beneficial reactive species through plasma treatment. The plasma process transforms these harmful substances into reactive oxygen and fluorine species that can react with and remove the deposits, turning the harmful deposition problem into a beneficial cleaning mechanism
2Object-generated harmful factors
If plasma reactor is added to treat exhaust gas, then hydrogenated amorphous carbon and hydrocarbon are removed from exhaust gas, but device complexity increases
Solution Approach 1:
The plasma reactor is designed to perform multiple functions: it generates reactive species for removing hydrogenated amorphous carbon, produces reactive fluorine for hydrocarbon removal, and serves as a connection component in the exhaust gas flow path. This multi-functionality reduces the need for separate treatment devices, thereby limiting the increase in system complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The plasma treatment effectively removes hydrogenated amorphous carbon and hydrocarbon deposits, generating carbon dioxide, carbon monoxide, and water vapor, thereby preventing pump degradation and maintaining pump efficiency.
Implementation Method 1
a plasma reactor configured to form a plasma reaction region using plasma; and a gas supplying device configured to supply a treatment gas to the plasma reactor, wherein the residual gas is discharged from the process chamber, flows along the chamber exhaust pipe so that an exhaust gas is formed, and the treatment gas is decomposed by plasma in the plasma reaction region so that reactive species are formed
Implementation Method 2
an oxygen gas supplied to a plasma reactor is decomposed in a plasma region of the plasma reactor so that heated reactive oxygen can be generated, and the generated reactive oxygen is introduced into the vacuum pump and reacts with hydrogenated amorphous carbon that is deposited in the vacuum pump so that hydrogenated amorphous carbon deposited in the vacuum pump can be removed
Implementation Method 3
hydrocarbon (CXHY) deposited in the vacuum pump is removed by reacting with fluorine (F2) generated by decomposing nitrogen trifluoride (NF3) into plasma so that deterioration of the performance of the vacuum pump can be prevented
Data Source
AI summary
A semiconductor manufacturing facility includes: a process chamber in which an amorphous carbon layer (ACL) process in which amorphous carbon is deposited so that an ACL is formed, is performed; a vacuum pump in which a residual gas generated in the process chamber is discharged from the process chamber while the ACL process is performed; a chamber exhaust pipe through which the process chamber and the vacuum pump communicate with each other; a plasma reactor configured to form a plasma reaction region using plasma; and a gas supplying device configured to supply a treatment gas to the plasma reactor.