Plasma ALD Magnetic Field Switching for Uniform Film Thickness
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Solution Overview
Problem
In film-forming technologies using charged particles like sputtering, plasma CVD, and plasma ALD, the leakage magnetic field causes Lorentz force disturbances, leading to uneven film thickness distribution, which is not effectively addressed by existing methods that rely on magnetic force for improved adhesion between masks and substrates.
Innovation Solution
The method involves switching the generation and stop of the magnetic field during film-forming operations, such that the magnetic field is only generated when plasma is not present, preventing its interference with charged particles and ensuring uniform film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If magnetic force is used to improve adhesion between mask and substrate, then mask adhesion is improved, but Lorentz force acts on charged particles causing film thickness distribution disturbance
Solution Approach 1:
The magnetic field is applied periodically - turned on during mask alignment to improve adhesion, then turned off during plasma film formation to eliminate Lorentz force interference. This periodic switching allows the system to benefit from magnetic adhesion only when needed, while preventing film thickness disturbance during deposition
Solution Approach 2:
The magnetic field generation is made dynamic rather than static - the magnetic field generating unit is controlled to generate magnetic field only during mask alignment and positioning, then stop generation during plasma film formation. This dynamic control allows the system to adapt magnetic field presence to the specific operational phase, resolving the contradiction between needing magnetic adhesion and avoiding Lorentz force interference
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses disturbances in film thickness distribution, enhancing the film-forming characteristics by preventing the adverse effects of the leakage magnetic field on charged particles during plasma-based deposition methods.
Implementation Method 1
a magnetic field generating unit is provided on an opposite side of the mask with a substrate interposed therebetween
Implementation Method 2
the Lorentz force caused by the leakage magnetic field acts on the charged particles
Data Source
AI summary
In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated.