Selective Plasma ALD Passivation for Dielectric-Over-Metal Deposition
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Solution Overview
Problem
Existing methods struggle to selectively deposit silicon dielectric materials like silicon oxide, carbon doped silicon oxide, and carbon doped silicon oxynitride on dielectric surfaces relative to metal surfaces in semiconductor manufacturing using plasma enhanced processes.
Innovation Solution
A selective plasma enhanced atomic layer deposition (ALD) process that involves forming an oxidized metal surface on a substrate, followed by a passivation layer, then exposing it to a silicon precursor, and finally using plasma to oxidize both the passivation layer and the silicon-containing layer, resulting in a silicon-containing dielectric film on the dielectric material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma enhanced ALD is used to deposit silicon dielectric materials, then deposition speed and film quality are improved, but metal surfaces are also oxidized along with dielectric surfaces
Solution Approach 1:
The patent applies preliminary action by forming a passivation layer on the metal surface before the plasma enhanced ALD deposition process. This passivation layer is created in advance to prevent the metal surface from oxidizing during the subsequent plasma treatment, allowing the dielectric material to be deposited selectively without harmful oxidation of the metal substrate.
Solution Approach 2:
The patent uses a passivation layer as an intermediary substance between the plasma environment and the metal surface. This intermediate layer acts as a protective barrier that allows the plasma to proceed with depositing the silicon dielectric material while preventing direct interaction between the plasma and the metal surface that would cause oxidation.
2Object-generated harmful factors
If selective deposition methods are used to protect metal surfaces, then metal oxidation is prevented, but deposition selectivity and process complexity increase
Solution Approach 1:
The patent applies local quality by creating a passivation layer specifically on the metal surfaces that need protection, while leaving the dielectric surfaces unprotected and ready for deposition. This localized treatment ensures that only the metal surfaces receiving the passivation layer are protected from oxidation, while the dielectric surfaces remain accessible for the plasma enhanced ALD process, achieving selective protection without unnecessary complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves selective deposition of silicon dielectric films on dielectric materials while avoiding oxidation of metal surfaces, ensuring precise control and adherence to performance requirements.
Implementation Method 1
exposing it to a silicon precursor, and finally using plasma to oxidize both the passivation layer and the silicon-containing layer
Implementation Method 2
using plasma to oxidize both the passivation layer and the silicon-containing layer, resulting in a silicon-containing dielectric film
Implementation Method 3
exposed to a passivation agent that preferentially adsorbs more onto the oxidized metal surface than the dielectric material, thereby forming a passivation layer on the oxidized metal surface
Implementation Method 4
exposed to a silicon precursor that preferentially adsorbs more onto the dielectric material than the passivation layer, thereby forming a chemi-adsorbed silicon-containing layer on the dielectric material
Data Source
AI summary
A selective plasma enhanced atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material that the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to a plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a dielectric film on the dielectric material.