Plasma Processing Apparatus Surface Wave Dielectric Segmentation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional plasma processing apparatuses face challenges with high costs due to the large amount of dielectric material required, non-uniform gas supply, and metal contamination from excessive high-frequency power application, especially when processing larger substrates.
Innovation Solution
A plasma processing apparatus using a microwave frequency of 915 MHz or less, where the electromagnetic wave is propagated as a conductor surface wave along a metal surface within the processing chamber, reducing the need for dielectric material and allowing for uniform gas supply and minimizing metal contamination.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the dielectric member is installed to cover the substantially entire processing surface of the substrate, then uniform plasma processing can be performed on the entire substrate, but a great amount of dielectric member is required resulting in increased manufacturing cost
Solution Approach 1:
The dielectric member is divided into a plurality of separate dielectric members that are arranged in an array, rather than using a single large dielectric plate. This segmentation reduces the total amount of dielectric material required while maintaining the microwave transmission function across the entire processing surface.
Solution Approach 2:
The patent transitions from a single-plane dielectric configuration to a multi-layer stacked arrangement of dielectric members. By stacking dielectric members in multiple layers with microwave transmission holes aligned vertically, the patent achieves uniform microwave distribution across large substrate areas using less total dielectric material.
2Manufacturing precision
If the dielectric member is installed on the entire bottom surface of the cover, then plasma can be generated under the entire substrate surface, but it becomes difficult to uniformly supply processing gas onto the entire substrate processing surface
Solution Approach 1:
The dielectric member is segmented into multiple separate units with microwave transmission holes, which allows processing gas to be supplied uniformly through the holes while maintaining plasma generation across the entire substrate surface. The segmented structure enables both plasma uniformity and gas supply uniformity.
Solution Approach 2:
The dielectric member is designed with localized microwave transmission holes distributed across its surface, allowing gas to be supplied at specific locations while maintaining overall uniformity. This local quality approach enables uniform gas supply through the dielectric structure without compromising plasma generation uniformity.
3Manufacturing precision
If most of the processing chamber inner surface is covered by the dielectric member, then plasma can be confined to the substrate area, but the high frequency bias affects the sheath around the ground surface causing excessive ion energy and metal contamination
Solution Approach 1:
The dielectric member is divided into multiple separate units with transmission holes, creating localized plasma generation zones rather than a continuous plasma field. This segmentation prevents excessive high frequency bias effects on the ground surface while maintaining plasma confinement to the substrate area, reducing metal contamination.
Solution Approach 2:
Instead of covering the entire processing chamber inner surface with dielectric material, the patent uses a partial coverage approach with segmented dielectric members containing transmission holes. This partial action maintains sufficient plasma confinement while avoiding the harmful effects of excessive dielectric coverage on the ground surface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces the amount of dielectric material needed, prevents overheating and contamination, and enables uniform plasma processing across larger substrates with improved processing conditions and cost-effectiveness.
Implementation Method 1
the electromagnetic wave is propagated as a conductor surface wave along a metal surface within the processing chamber
Implementation Method 2
exciting plasma in a processing chamber by using microwaves
Implementation Method 3
a dielectric member provided on an inner surface of the processing chamber... transmit the electromagnetic wave supplied from a microwave source into an inside of the processing chamber
Data Source
AI summary
A plasma processing apparatus includes: a processing chamber produced from a metal; a susceptor configured to mount a substrate; an electromagnetic wave source that supplies an electromagnetic wave; one or more dielectric member provided at an inner wall of the processing chamber, and configured to transmit the electromagnetic wave into an inside of the processing chamber; one or more metal electrode, wherein each metal electrode is installed on a bottom surface of each dielectric member such that a part of the each dielectric member is exposed to the inside of the processing chamber; and a surface wave propagating section which is a metal surface facing the susceptor, the surface wave propagating section being installed adjacent to the dielectric member and being exposed to the inside of the processing chamber. The surface wave propagating section and a bottom surface of the metal electrode are positioned on the same plane.