Plasma-Assisted Ion Beam Processing for 3D Structure Uniformity
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Solution Overview
Problem
Conventional plasma doping systems face challenges in achieving uniform ion treatment of three-dimensional structures, particularly in controlling the angular distribution of knock-on ions, leading to non-uniform coating of 3-D structures like fin type field effect transistors.
Innovation Solution
A multi-chamber processing system is employed, featuring an ion beam chamber and a plasma chamber, with independent control of ion treatments, allowing for separate control of ion dose, energy, and angular distribution of ions, enabling simultaneous or alternating exposure of ions and plasma to the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional PLAD is used with perpendicular ion incidence, then ion implantation can be performed, but uniform exposure of all surfaces of 3-D structures is not achieved
Solution Approach 1:
The processing system is segmented into two separate chambers: a first chamber for generating plasma and ions, and a second chamber for plasma-assisted deposition. This segmentation allows independent control of ion generation and deposition processes, enabling uniform angular distribution of ions on 3-D structures while maintaining system functionality.
Solution Approach 2:
A plasma sheath modifier is introduced as an intermediary component between the ion source and substrate. This plasma sheath modifier generates a plasma that modifies the angular distribution of ions, causing ions to impinge on the substrate at a broader range of angles rather than perpendicular incidence, thereby achieving uniform coverage of 3-D structures.
2Manufacturing precision
If separate tools are used to provide ions over a range of angles, then uniform coverage of 3-D structures is achieved, but process complexity and cost increase
Solution Approach 1:
The patent merges the ion generation function and the plasma-assisted deposition function into a single integrated processing system with two chambers. The first chamber generates ions that are transported through a plasma sheath modifier, while the second chamber provides the plasma environment for deposition. This combination eliminates the need for separate processing tools while achieving uniform coating on 3-D structures.
Solution Approach 2:
The processing system is designed to perform multiple functions within a single apparatus: ion generation, angular distribution control via plasma sheath modification, and plasma-assisted deposition. This multi-functionality allows the system to achieve uniform coating on 3-D structures without requiring separate specialized tools for each function.
3Manufacturing precision
If high quality layers are deposited on 3-D structures, then coating quality improves, but control of angular distribution of knock-on ions becomes challenging
Solution Approach 1:
The plasma sheath modifier acts as an intermediary that automatically controls the angular distribution of ions. By generating a plasma in the region between the ion source and substrate, the system creates a sheath that redirects ions to achieve a broader angular distribution without requiring complex external control mechanisms, thereby maintaining ease of operation while improving ion treatment uniformity.
Solution Approach 2:
The system controls the angular distribution of ions by changing plasma parameters (such as plasma density and potential) in the sheath modifier region. By adjusting these plasma parameters, the angular distribution of ions can be optimized for high quality layer deposition on 3-D structures while maintaining simple operational control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for improved uniformity and control in ion treatment of 3-D structures, enhancing the quality of coatings and surface treatment processes, such as deposition and passivation, without the need for separate tools.
Implementation Method 1
a biasing system configured to supply a plurality of first voltage pulses to direct first ions from the first plasma through the second chamber towards the substrate during one time period
Implementation Method 2
to supply a plurality of second voltage pulses to generate the second plasma and to attract second ions from the second plasma during another time period
Implementation Method 3
an extraction assembly disposed between the first chamber and second chamber to provide at least plasma isolation between the first plasma and the second plasma
Data Source
AI summary
A system for processing a substrate may include a first chamber operative to define a first plasma and a second chamber adjacent the first chamber, where the second chamber is electrically isolated from the first chamber, and configured to define a second plasma. The system may also include an extraction assembly disposed between the first chamber and second chamber to provide at least plasma isolation between the first plasma and the second plasma, a substrate assembly configured to support the substrate in the second chamber; and a biasing system configured to supply a plurality of first voltage pulses to direct first ions from the first plasma through the second chamber towards the substrate during one time period, and to supply a plurality of second voltage pulses to generate the second plasma and to attract second ions from the second plasma during another time period.