Plasma Baffle Control for Substrate Charge Neutralization
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Solution Overview
Problem
Existing substrate processing methods using plasma face challenges such as substrate damage due to strong attraction forces after plasma treatment, inefficient ion-to-radical proportion control, and residual charge accumulation, which can lead to substrate damage during lifting.
Innovation Solution
A method and apparatus that utilize a baffle assembly with adjustable hole patterns and sizes to control the proportion of ions and radicals in plasma, including a neutralizing operation to discharge residual charges, minimizing substrate damage by varying the overlap of baffle holes and applying high-frequency power to generate and control plasma.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma is supplied into the treatment space for substrate processing, then substrate treatment efficiency is improved, but residual charges accumulate on the substrate causing damage during lifting
Solution Approach 1:
A neutralizing operation is performed after the substrate processing operation to remove residual charges from the substrate before lifting. This preliminary action prevents damage by addressing the charge accumulation problem before it causes harm during substrate removal.
2Quantity of substance
If a grounded baffle is provided between plasma generation space and treatment space, then radicals are supplied into treatment space, but ion-to-radical proportion control is inefficient
Solution Approach 1:
The baffle assembly is designed with adjustable hole patterns and sizes that can be dynamically changed between operations. By varying the overlap of baffle holes, the system can control the proportion of ions and radicals supplied into the treatment space, providing adaptability for different processing requirements.
Solution Approach 2:
The physical parameters of the baffle assembly (hole pattern, hole size, overlap degree) are changed to control plasma composition. By adjusting these parameters, the system optimizes the ion-to-radical proportion for specific substrate processing needs.
3Reliability
If strong attraction force is formed between substrate and lower electrode after plasma treatment, then plasma treatment is effective, but substrate may be damaged when forcibly lifted
Solution Approach 1:
The neutralizing operation removes residual charges from the substrate before the lifting operation. This preliminary charge removal prevents the strong electrostatic attraction that would otherwise cause substrate damage during removal, while maintaining treatment effectiveness.
4Quantity of substance
If baffle hole overlap is increased for better ion control, then ion proportion in plasma is improved, but substrate processing efficiency may be reduced
Solution Approach 1:
The system dynamically adjusts the baffle hole overlap based on the specific operation phase. During neutralizing operations, higher overlap provides greater ion proportion for charge removal. During processing operations, the overlap is optimized for overall efficiency, demonstrating adaptive control that balances ion proportion and productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Efficient substrate processing is achieved with minimized damage by controlling ion-to-radical ratios and neutralizing residual charges, ensuring safe lifting of substrates post-treatment.
Implementation Method 1
plasma refers to an ionized gas state formed of ions, radicals, electrons, and the like, and is generated by a very high temperature, strong electric fields, or RF electromagnetic fields
Implementation Method 2
The power source also applies an RF signal to the lower electrodes of the substrate support unit that supports the substrate, creating an electric field in the treatment space
Implementation Method 3
a grounded baffle is provided between the plasma generation space where the plasma is generated and the treatment space where the substrate is treated, and radicals in the plasma are supplied into the treatment space through holes formed in the baffle
Implementation Method 4
After the plasma treatment of the substrate is finished, strong attraction force is formed between the substrate and the lower electrode due to the accumulation of negative charges on the surface of the substrate
Implementation Method 5
supplying second plasma generated in the plasma generation space through the baffle assembly into the treatment space to remove residual charges on the substrate
Data Source
AI summary
The inventive concept provides a method of processing a substrate. The method of processing a substrate may include a substrate processing operation of supplying first plasma generated in a plasma generation space through a baffle assembly into a treatment space, and processing a substrate supported on a support unit within the treatment space by using the first plasma; and a neutralizing operation of, after the substrate processing operation, while the substrate is supported on the support unit, supplying second plasma generated in the plasma generation space through the baffle assembly into the treatment space to remove residual charges on the substrate.