Plasma Baffle Ring Structure for Plasma Confinement and Particle Removal

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Solution Overview

Problem

Existing plasma baffles struggle to effectively control plasma distribution and remove foreign substances from substrates during semiconductor processing, while also maintaining high etching yields and fluid movement speeds.

Innovation Solution

A plasma baffle design comprising a lower ring with a central hole and multiple slits, an intermediate ring forming an acute angle with the horizontal direction, and an upper ring, which allows for independent control of fluid flow rates and plasma confinement.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If a conventional plasma baffle design is used, then plasma distribution can be controlled, but foreign substances cannot be effectively removed from the substrate

Engineering Contradiction:
Improveforeign substances on substrateVSAvoidetching yield
Core Design Contradiction:
Object-affected harmful factorsVSProductivity

Solution Approach 1:

The plasma baffle is segmented into multiple functional regions with different slit configurations. The lower ring contains multiple radially extending slits for plasma control, while the intermediate ring provides additional flow paths. This segmentation allows different regions to perform specialized functions: removing foreign substances through enhanced fluid flow while maintaining plasma confinement in critical areas, thereby resolving the contradiction between foreign substance removal and etching yield maintenance.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the plasma baffle are designed with locally optimized properties. The lower ring slits have specific width and spacing optimized for plasma confinement, while the intermediate ring provides additional flow capacity for foreign substance removal. This local quality differentiation enables the baffle to simultaneously achieve plasma control and effective contaminant removal without compromising etching performance.

Inventive Principle:
Principle #3Local quality

2Object-affected harmful factors

If fluid flow rate is increased to remove foreign substances, then cleaning effectiveness improves, but plasma confinement becomes difficult

Engineering Contradiction:
Improveforeign substances on substrateVSAvoidplasma distribution
Core Design Contradiction:
Object-affected harmful factorsVSStability of the object's composition

Solution Approach 1:

The fluid flow path is segmented into multiple channels through the lower ring slits and intermediate ring slits. This segmentation distributes the high flow rate across multiple pathways, reducing the velocity and disruptive impact on plasma in any single region while maintaining overall cleaning effectiveness. The divided flow paths allow high total flow for contaminant removal without compromising plasma confinement stability.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The plasma baffle extends in the vertical dimension with the intermediate ring positioned above the lower ring. This vertical arrangement creates multiple levels of flow control, allowing fluid to be discharged through different heights and positions. The multi-dimensional configuration enables effective foreign substance removal through enhanced flow while distributing plasma confinement across multiple vertical zones, preventing plasma instability.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Ease of manufacture

If the plasma baffle structure is simplified, then manufacturing becomes easier, but independent flow rate control is lost

Engineering Contradiction:
Improveplasma baffle fabricationVSAvoidindependent flow rate control
Core Design Contradiction:
Ease of manufactureVSAdaptability or versatility

Solution Approach 1:

The plasma baffle is designed as a segmented structure with distinct lower ring and intermediate ring components, each with dedicated slits. This segmentation enables independent control of fluid flow rates through different regions, allowing versatile process optimization. Despite the increased structural complexity, each segment can be manufactured using standard fabrication techniques, and the modular design facilitates assembly and maintenance.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The plasma baffle structure serves multiple functions simultaneously: the lower ring slits provide plasma confinement and fluid discharge, while the intermediate ring slits provide additional flow control and plasma distribution. This multi-functionality allows a single component to achieve complex process control requirements, reducing the need for additional separate devices and maintaining ease of manufacture while providing versatile flow rate control.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The plasma baffle enhances etching yields, increases fluid movement speeds, and effectively removes foreign substances from substrates by optimizing plasma confinement and fluid flow control.

Implementation Method 1

A plasma baffle may be utilized to control plasma distribution and to discharge vapors

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 2

the fluid may be discharged in an oblique direction through the intermediate ring, thereby the foreign substance on the substrate may be effectively removed

Methodology Applied
Scientific EffectFluid flow:

Data Source

PatentUS12322577B2Plasma baffle, substrate processing apparatus including the same, and substrate processing method using the same
Publication Date: 2025.06.03 SAMSUNG ELECTRONICS CO LTD
  • US12322577B2 patent drawing
  • US12322577B2 patent drawing
  • US12322577B2 patent drawing

AI summary

Disclosed are plasma baffles, substrate processing apparatuses, and substrate processing methods. The plasma baffle comprises a lower ring, an upper ring outside the lower ring in a plan view and extending vertically, and an intermediate ring that extends from the lower ring to the upper ring to form an acute angle with respect to a horizontal direction. The lower ring includes a lower central hole that vertically penetrates a center of the lower ring, and a plurality of lower slits outside the lower central hole and vertically penetrating the lower ring. The intermediate ring provides an intermediate slit that connects an inner lateral surface of the intermediate ring to an outer lateral surface of the intermediate ring. An area ratio of the plurality of lower slits to the lower ring is equal to or greater than about 59%.