Plasma Baffle Structure for High-Throughput Substrate Processing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional substrate processing apparatuses face challenges in generating high-density plasma, leading to low throughput in semiconductor device manufacturing.
Innovation Solution
A substrate processing apparatus with a reaction vessel, resonance coil, and a baffle structure comprising two baffle plates without holes, where the gas flows along the inner wall of the reaction vessel to concentrate near the resonance coil, enhancing plasma generation efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional substrate processing apparatus is used, then device complexity is low, but plasma density is low and throughput is low
Solution Approach 1:
The reaction vessel is divided into multiple regions using first and second baffles, creating distinct plasma generation region and substrate processing region. This segmentation allows optimized plasma confinement in one region while maintaining substrate processing in another, thereby increasing plasma density and throughput without excessive complexity
Solution Approach 2:
The baffle structure introduces a vertical dimension to plasma confinement by extending baffles from the bottom toward the top of the reaction vessel. This vertical segmentation creates layered plasma regions, enabling high-density plasma generation above the substrate while maintaining processing efficiency
2Power
If baffle structure is added to concentrate plasma, then plasma generating efficiency is improved, but device complexity increases
Solution Approach 1:
The baffle structure is strategically positioned to create localized plasma concentration zones. The first baffle is placed near the bottom to confine plasma close to the substrate, while the second baffle extends higher to further concentrate plasma. This localized approach improves plasma generating efficiency without requiring complex structures throughout the entire vessel
Solution Approach 2:
The baffle height is optimized to extend approximately 70-90% of the distance from the bottom to the top of the reaction vessel. This parameter optimization creates effective plasma confinement while avoiding excessive complexity. The gap between baffle outer circumference and vessel inner circumference is also controlled to balance plasma confinement with gas flow requirements
3Quantity of substance
If gas flows along inner wall to concentrate plasma, then plasma density increases, but gas flow control becomes more difficult
Solution Approach 1:
The baffle structure acts as an intermediary element that guides gas flow along the inner wall of the reaction vessel. Gas introduced at the bottom naturally follows the baffle surface upward, creating concentrated plasma regions without requiring complex flow control mechanisms. The baffle mediates between simple gas introduction and effective plasma concentration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves high-throughput substrate processing by generating plasma with high energy and long lifespan, improving plasma generating efficiency and preventing abnormal discharge.
Implementation Method 1
One method of generating plasma is known as an inductive coupling plasma (ICP) method. In the ICP method, radio frequency power is supplied to a coil to generate an electric field in a plasma generating space so that a gas supplied into the plasma generating space is in a plasma state.
Implementation Method 2
a first baffle installed between the upper end of the reaction vessel and an upper end of the resonance coil with a gap between an outer circumference of the first baffle and an inner circumference of the reaction vessel along the outer circumference of the first baffle; a second baffle installed between the first baffle and the upper end of the resonance coil with a second gap between an outer circumference of the second baffle and an inner circumference of the reaction vessel
Data Source
AI summary
A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.