Plasma Processing Method Using Pulse-Modulated Biasing Power
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Solution Overview
Problem
Conventional plasma processing methods face challenges in maintaining uniform plasma density across the surface of objects being processed, leading to non-uniform etching results without requiring changes to the processing apparatus configuration, which complicates the setup and increases costs.
Innovation Solution
A plasma processing method involving the use of a plasma generating power with frequencies between 100 MHz and 150 MHz, combined with a biasing power of lower frequency, and pulse-modulating the biasing power to achieve a duty ratio between 10% and 70% and frequency between 5 kHz and 20 kHz, ensuring uniform etching across the object surface without altering the apparatus configuration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a dielectric layer is formed in the central portion inside the mounting unit to weaken the electric field, then plasma density uniformity is improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The patent applies parameter changes by pulse-modulating the biasing power with specific duty ratios (10-70%) and frequencies (5-20 kHz) to control plasma density distribution. This temporal parameter modulation achieves uniform plasma density without adding physical dielectric layers, thereby resolving the contradiction between manufacturing precision and device complexity
Solution Approach 2:
The patent implements periodic action through pulse modulation of the biasing power, where the power is supplied in periodic pulses with controlled duty ratios and frequencies. This periodic supply pattern creates uniform plasma density distribution over time without requiring complex apparatus modifications, addressing both the improvement in manufacturing precision and the avoidance of increased device complexity
2Manufacturing precision
If pulse modulation is applied to biasing power with duty ratio 10-70% and frequency 5-20 kHz, then plasma density uniformity is improved, but control complexity increases
Solution Approach 1:
The patent utilizes parameter changes by establishing specific ranges for duty ratio (10-70%) and frequency (5-20 kHz) of the pulse-modulated biasing power. These parameter specifications enable uniform etching through plasma density control while keeping the control system within manageable complexity bounds through defined operational windows
Solution Approach 2:
The patent applies dynamics by making the biasing power adjustable and time-variable through pulse modulation. The dynamic control of power parameters allows adaptation to different processing conditions while maintaining uniformity, resolving the contradiction between manufacturing precision and control complexity through flexible yet parameterized control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for wider processing condition settings, maintaining surface uniformity and enabling continuous processing without stopping the apparatus, while effectively controlling etching rates and critical dimensions across the object surface.
Implementation Method 1
supplying a plasma generating power of a frequency ranging from about 100 MHz to about 150 MHz as a power for generating plasma of the processing gas
Implementation Method 2
supplying a plasma generating power of a frequency ranging from about 100 MHz to about 150 MHz as a power for generating plasma
Implementation Method 3
supplying a biasing power which is a power having a frequency lower than the frequency of the plasma generating power... implanting ions in the plasma toward the object side to be processed
Implementation Method 4
supplying a biasing power which is a power having a frequency lower than the frequency of the plasma generating power as a biasing power for implanting ions in the plasma toward the object side
Implementation Method 5
etching the object to be processed by the plasma of the processing gas while pulse-modulating the biasing power so that a duty ratio ranges from about 10% to about 70% and the frequency ranges from about 5 kHz to about 20 kHz
Data Source
AI summary
Disclosed is a plasma processing method which includes a gas supplying process, a power supplying process, and an etching process. In the gas supplying process, a processing gas is supplied into a processing container in which an object to be processed is disposed. In the power supplying process, a plasma generating power of a frequency ranging from about 100 MHz to about 150 MHz as a power for generating plasma of the processing gas supplied into the processing container, and a biasing power which is a power having a frequency lower than that of the plasma generating power are supplied. In the etching process, the object to be processed is etched by the plasma of the processing gas while the biasing power is pulse-modulated so that the duty ratio ranges from about 10% to about 70% and the frequency ranges from about 5 kHz to about 20 kHz.