Selective Plasma Bond Patterning to Prevent Wafer Non-Bond Regions

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Solution Overview

Problem

Fusion bonding processes in package components like wafers and dies often result in tiny non-bond regions due to the Joule-Thomson effect, leading to inefficiencies and potential failures.

Innovation Solution

Selective plasma treatment is applied to specific portions of the bond film surfaces to alter their composition, disrupting bond wave propagation and reducing the Joule-Thomson effect, thereby minimizing non-bond regions.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If fusion bonding is performed at high temperature to bond package components, then bonding strength is improved, but tiny non-bond regions occur due to the Joule-Thomson effect

Engineering Contradiction:
Improvebonding strengthVSAvoidbonding completeness
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The patent applies selective plasma treatment to specific regions of the bond film surface to create local compositional differences. The treated portions have altered oxygen content compared to untreated portions, which locally modifies the thermal response during bonding. This local quality change allows the bond wave to propagate differently in treated versus untreated regions, preventing the formation of non-bond regions while maintaining overall bonding strength.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent changes the chemical composition parameter of the bond film by performing selective plasma treatment. This treatment modifies the oxygen atomic percentage in specific regions, creating a parameter gradient that affects thermal conductivity and heat distribution during the bonding process. By controlling this compositional parameter, the patent prevents the Joule-Thomson effect from creating non-bond regions.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If selective plasma treatment is applied to alter bond film composition, then non-bond regions are reduced, but process complexity increases

Engineering Contradiction:
Improvebonding completenessVSAvoidprocess complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent performs plasma treatment as a preliminary step before the actual fusion bonding process. By pre-modifying the bond film composition in specific regions, the patent prepares the surface to prevent non-bond region formation during subsequent bonding. This preliminary action simplifies the overall process by addressing potential bonding issues before they occur, rather than requiring complex real-time control during bonding.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent replaces complex mechanical or process control mechanisms with a chemical modification approach. Instead of attempting to control heat distribution or bond wave propagation through complex mechanical means during bonding, the patent uses plasma treatment to chemically modify the bond film, allowing the bonding process to proceed more uniformly with simpler control systems.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively reduces or eliminates tiny non-bond regions, enhancing the bonding process and improving the reliability of package components.

Implementation Method 1

Selective plasma treatment is applied to specific portions of the bond film surfaces to alter their composition

Methodology Applied
Scientific EffectPlasma treatment: Plasma

Data Source

PatentUS20250349553A1Stealth patterning formation for bonding improvement
Publication Date: 2025.11.13 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250349553A1 patent drawing
  • US20250349553A1 patent drawing
  • US20250349553A1 patent drawing

AI summary

A method includes forming a patterned treating mask over a first surface dielectric layer of a first package component, wherein portions of the first surface dielectric layer are exposed through the patterned treating mask, performing a selective plasma treatment on the portions of the first surface dielectric layer that are exposed through the patterned treating mask to form treated portions, removing the patterned treating mask, and bonding a second surface dielectric layer in a second package component to the first surface dielectric layer.