Semiconductor Surface Bonding Using Plasma Activation and Laser Irradiation
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Solution Overview
Problem
Conventional bonding devices face difficulties in bringing activated bonding surfaces of semiconductor chips and wiring substrates into contact without physical disruption, especially when handling multiple chips on a carrier substrate, which can lead to breakage or require specialized handling.
Innovation Solution
A bonding device and method that utilize an activating unit to expose the bonding surfaces to a plasma atmosphere and a bonding unit that irradiates active energy rays to bring the surfaces closer, eliminating the need for physical contact and allowing for activation and bonding without chip removal or transport, using blistering or ablation effects to facilitate the bonding process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional bonding devices are used to bring bonding surfaces into contact, then bonding can be achieved, but the bonding surfaces must be physically handled which disrupts the activated state and requires special transport hands
Solution Approach 1:
The patent replaces mechanical contact-based bonding with a non-contact method using active energy ray irradiation. The bonding surfaces are activated by plasma, then an active energy ray (such as a laser) is used to locally heat and fuse the surfaces without requiring physical contact or special transport hands, thus maintaining the activated state throughout the process.
Solution Approach 2:
The bonding surfaces are activated by plasma treatment before the actual bonding step. This preliminary activation creates a reactive state on the surfaces that enables bonding without subsequent mechanical disruption. The activation is completed in advance, and the surfaces are then brought together through non-contact heating.
2Productivity
If semiconductor chips are removed from carrier substrate for bonding, then individual chip bonding is achieved, but the process becomes complex and time-consuming
Solution Approach 1:
The patent merges the carrier substrate with the bonding process by performing activation and bonding directly on the carrier substrate without removing individual chips. Multiple chips can be activated and bonded simultaneously in their original positions, eliminating the need for complex pick-and-place operations and significantly improving productivity.
Solution Approach 2:
The carrier substrate serves multiple functions: it holds the chips during activation, positions them for bonding, and acts as part of the bonding structure itself. This multi-functionality eliminates the need for separate handling steps and simplifies the overall bonding process.
3Strength
If plasma activation is performed on bonding surfaces, then bonding strength is improved, but the activated surfaces are sensitive to contact and require special handling
Solution Approach 1:
The patent replaces mechanical contact with non-contact active energy ray irradiation for the bonding step. The plasma-activated surfaces are fused through localized heating from the active energy ray without requiring physical contact, thus preserving the reactive state and achieving strong bonds without mechanical disruption.
Solution Approach 2:
The active energy ray acts as an intermediary between the activated surfaces, transferring energy to fuse the surfaces without requiring direct mechanical contact. This intermediary mechanism allows the activated surfaces to bond while avoiding the harmful effect of physical contact that would disrupt their reactive state.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables reliable and efficient bonding of semiconductor chips to wiring substrates while maintaining the activated state of the bonding surfaces, reducing the risk of chip breakage and simplifying the bonding process by using active energy rays to bring the surfaces together without physical contact.
Implementation Method 1
surfaces to be bonded are activated by plasma
Implementation Method 2
a bonding unit configured to irradiate an active energy ray to cause the first bonding surface and the second bonding surface to come closer and bond with each other
Implementation Method 3
a first holding substrate that holds the first element can be provided with a blistering layer in which blistering occurs due to irradiation of the active energy ray
Implementation Method 4
a first holding substrate that holds the first element can be provided with an adhesive layer in which ablation occurs due to irradiation of the active energy ray
Data Source
AI summary
A bonding device is configured to bond a first element and a second element. The bonding device comprises an activating unit configured to activate a first bonding surface, which is a bonding surface of the first element, and a second bonding surface, which is a bonding surface of the second element, and a bonding unit configured to irradiate an active energy ray to cause the first bonding surface and the second bonding surface to come closer and bond with each other, from a state in which the first bonding surface and the second bonding surface face each other with a prescribed gap therebetween.