Plasma Boron Doping with Partial Pressure Control to Prevent Deposits
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Solution Overview
Problem
The generation of deposits during the doping process of boron onto a substrate surface using a plasma leads to attachment on the substrate surface, affecting the uniformity and quality of semiconductor device manufacturing.
Innovation Solution
A method involving the controlled flow rate ratio of an impurity-containing gas and a dilution gas is employed to set the partial pressure of the impurity-containing gas in the process chamber below the threshold for deposit formation, utilizing plasma-excited active species to form a boron-containing layer and an oxide cap layer on the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the partial pressure of impurity-containing gas is increased to enhance doping efficiency, then the boron concentration in the substrate surface is improved, but deposits containing polymer are generated in the process chamber
Solution Approach 1:
The patent applies parameter changes by precisely controlling the partial pressure of the impurity-containing gas (boron-containing gas) to be below the threshold pressure that causes deposit formation. This optimization allows achieving sufficient boron concentration in the substrate surface while avoiding the harmful effect of polymer deposit generation in the process chamber.
Solution Approach 2:
The patent implements local quality by creating different gas pressure conditions in different regions of the process chamber. The impurity-containing gas is supplied at a controlled partial pressure near the substrate surface to enable effective doping, while the overall chamber pressure is maintained below the deposit formation threshold, thus achieving both high boron concentration and preventing deposits.
2Manufacturing precision
If the flow rate of impurity-containing gas is increased to improve doping uniformity, then the coverage of boron-containing layer is enhanced, but the risk of deposit formation increases
Solution Approach 1:
The patent optimizes the flow rate parameters by controlling the impurity-containing gas flow rate to achieve uniform boron distribution across the substrate surface. Simultaneously, the total gas pressure is maintained below the critical threshold to prevent polymer deposit formation, thus achieving both doping uniformity and deposit prevention through coordinated parameter control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach suppresses deposit generation, maintains high boron concentration, and ensures uniform coverage of the boron-containing layer and oxide layer, enhancing semiconductor device performance.
Implementation Method 1
plasma-exciting the impurity-containing gas and the dilution gas; and (c) supplying an active species containing the impurity generated by plasma-exciting
Data Source
AI summary
According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: modifying a surface of a substrate into an impurity-containing layer by performing: (a) supplying an impurity-containing gas containing an impurity and a dilution gas into a process chamber in which the substrate is accommodated; (b) plasma-exciting the impurity-containing gas and the dilution gas; and (c) supplying an active species containing the impurity generated by plasma-exciting the impurity-containing gas and the dilution gas to the substrate, wherein a flow rate ratio of the impurity-containing gas to the dilution gas is controlled in (a) such that a partial pressure of the impurity-containing gas in the process chamber is set to a predetermined partial pressure less than a partial pressure at which the impurity-containing gas forms deposits containing a polymer in the process chamber.