Multi-Region Plasma Buffer Electrode Layout for Uniform Low-Temp Deposition
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Solution Overview
Problem
As semiconductor device manufacturing progresses towards lower temperature substrate processing, existing technologies face challenges in uniformly processing films due to increased high-frequency power requirements, which can lead to non-uniform film deposition and particle generation.
Innovation Solution
A substrate processing apparatus with an odd number of electrodes, where one electrode is grounded and shared by adjacent high-frequency power-supplied electrodes, is used to generate plasma in a buffer chamber, optimizing gas supply and plasma generation regions for improved uniformity and reduced particle generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If high-frequency power is increased to enable low-temperature substrate processing, then processing temperature is reduced, but film uniformity deteriorates
Solution Approach 1:
The plasma generation system is segmented into multiple independent electrode pairs (at least three first electrodes and three second electrodes), where each pair generates localized plasma. This segmentation allows distributed plasma generation across the substrate surface, maintaining uniformity even at lower temperatures where plasma generation is less efficient.
Solution Approach 2:
Multiple second electrodes are combined into a common grounded electrode structure that serves multiple first electrodes simultaneously. This merging creates an integrated plasma generation system that covers a larger area with coordinated plasma discharge, improving both temperature control and film uniformity.
2Reliability
If high-frequency power is increased to maintain film deposition quality, then plasma generation improves, but particle generation increases
Solution Approach 1:
By dividing the plasma generation into multiple localized electrode pairs, each operating at optimized power levels, the system achieves reliable film deposition without concentrating excessive power in a single location, thereby reducing particle generation from localized plasma hotspots.
Solution Approach 2:
The system uses multiple electrode pairs to provide sufficient total plasma generation for quality film deposition, but each individual electrode pair operates at moderate power levels, avoiding the excessive local power density that causes particle generation while maintaining overall deposition quality.
3Productivity
If multiple electrodes are added to improve plasma generation, then active species generation increases, but device complexity increases
Solution Approach 1:
Multiple second electrodes are merged into a single common grounded electrode structure, which simplifies the overall device configuration while still enabling multiple plasma generation zones through the multiple first electrodes, thus improving throughput without proportionally increasing complexity.
Solution Approach 2:
The common second electrode serves multiple functions by acting as a ground reference for multiple first electrodes simultaneously, enabling it to participate in multiple plasma generation pairs. This multi-functionality increases productivity without adding proportional complexity, as one electrode structure fulfills multiple roles in the plasma generation system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the uniformity of film thickness and improves throughput by increasing the electrode area and active species generation, while reducing particle generation and installation space, allowing for efficient low-temperature substrate processing.
Implementation Method 1
a precursor gas and a reaction gas supplied into the process chamber are activated using plasma
Implementation Method 2
at least one first electrode connected to a high-frequency power supply
Data Source
AI summary
There is provided a substrate processing apparatus that includes a process chamber in which at least one substrate is processed; a gas supplier configured to supply a gas; and a buffer structure. The buffer structure includes at least two plasma generation regions in which gas is converted into plasma by a pair of electrodes connected to a high-frequency power supply and an electrode to be grounded, a first gas supply port that supplies a gas generated in a first plasma generation region among the at least two plasma generation regions, and a second gas supply port that supplies a gas generated in a second plasma generation region among the at least two plasma generation regions.