Plasma Chamber DC Bias Layout for Faster Film Cleaning
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Solution Overview
Problem
In plasma processing, the deposition of films in chambers often leads to increased cleaning times due to the difficulty in removing these films, which hampers efficiency and productivity in semiconductor manufacturing.
Innovation Solution
A plasma processing device with independently controlled direct current power supplies applied to the upper and side walls of the chamber, allowing for the partial removal of deposited films during processing and subsequent cleaning, utilizing direct current voltages to etch and remove fluorocarbon-based films, thereby shortening cleaning times and improving in-plane uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma processing is performed using certain gases, then film deposition occurs in the chamber, but the deposited film becomes difficult to remove and cleaning time increases
Solution Approach 1:
The patent applies preliminary action by performing partial film removal during the plasma processing step itself, before the dedicated cleaning step. The direct current power supply is used to etch and remove deposited fluorocarbon-based films from the chamber wall during the plasma processing period, so that subsequent cleaning requires less time and effort.
2Manufacturing precision
If multiple power supplies are used to control different chamber regions, then in-plane uniformity is improved, but device complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the power supply control into separate direct current power supplies for different chamber regions (upper portion and side wall). Each power supply can be controlled independently to apply appropriate direct current voltages to specific areas, enabling localized film removal and improved in-plane uniformity without requiring complex multi-parameter control of a single power supply.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces cleaning time and enhances in-plane uniformity by utilizing direct current power supplies to etch and remove deposited films, improving the efficiency of plasma processing and semiconductor manufacturing.
Implementation Method 1
a plurality of direct current power supplies are provided in an upper portion and on a side wall of the chamber
Implementation Method 2
the direct current power supplies are configured to operate individually... apply respective direct current voltages independent of each other... etch and remove fluorocarbon-based films
Data Source
AI summary
A plasma processing device includes a chamber, a plurality of direct current power supplies, and a controller. The direct current power supplies are provided in an upper portion and on a side wall of the chamber, wherein the direct current power supplies are configured to operate individually. The controller is configured to control the direct current power supplies such that the direct current power supplies apply respective direct current voltages independent of each other.