Plasma Chamber Component Cleaning via Thermal Depolymerization

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Solution Overview

Problem

Plasma cleaning methods are ineffective in removing deposits from components of plasma processing apparatuses, especially those made of materials that are not easily removable and located in areas where plasma active species cannot reach.

Innovation Solution

A method involving the formation of a film on the components using a polymerization reaction between isocyanate and amine or hydroxyl-containing compounds, followed by heating to depolymerize the film and remove the deposits, which allows for the removal of deposits without relying on plasma cleaning.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If plasma cleaning is used to remove deposits from components, then fluorocarbon films can be removed by active species, but deposits made of metal-containing materials or located in hard-to-reach areas cannot be effectively removed

Engineering Contradiction:
Improvecleaning effectivenessVSAvoidapplicability to different deposit types
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The invention changes the cleaning mechanism from plasma-based chemical reactions to thermal depolymerization. By heating the component to 200-400°C, the polymer film undergoes depolymerization that releases deposit materials as volatile compounds, enabling effective removal of metal-containing deposits and those in hard-to-reach areas where plasma cannot penetrate

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention introduces a polymer film as an intermediary substance. This film is formed on the component surface through polymerization of monomers in the gas phase, and then serves as a medium that facilitates deposit removal through thermal depolymerization, allowing cleaning of deposits that are resistant to direct plasma action

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If plasma cleaning is used, then fluorocarbon deposits can be removed, but the method is ineffective for deposits in areas where plasma active species hardly reach

Engineering Contradiction:
Improvedeposit removal capabilityVSAvoidaccessibility to all component surfaces
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The invention uses gas-phase monomers that can penetrate into hard-to-reach areas and form polymer films on all component surfaces including those inaccessible to plasma. The gas flow distributes monomers uniformly, ensuring complete coverage of the component interior, and subsequent thermal depolymerization removes deposits from all areas equally

Inventive Principle:
Principle #29Pneumatics and hydraulics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method effectively removes deposits from components without damaging them, reducing the frequency of component exchange and maintaining consistent substrate treatment conditions.

Implementation Method 1

a compound forming the film is generated by polymerization of a first compound contained in a first gas and a second compound contained in a second gas, the first compound being isocyanate and the second compound being amine or a compound having a hydroxyl group

Methodology Applied
Scientific EffectPolymerization:

Implementation Method 2

heating the component so that depolymerization of the compound forming the film occurs

Methodology Applied
Scientific EffectDepolymerization:

Data Source

PatentUS10734204B2Method for cleaning components of plasma processing apparatus
Publication Date: 2020.08.04 TOKYO ELECTRON LTD
  • US10734204B2 patent drawing
  • US10734204B2 patent drawing
  • US10734204B2 patent drawing

AI summary

There is disclosed a method for cleaning a component of a plasma processing apparatus which is disposed in an inner space defined by a processing chamber of the plasma processing apparatus. The cleaning method comprises: forming a film on the surface of the component, wherein a compound forming the film is generated by polymerization of a first compound contained in a first gas and a second compound contained in a second gas, the first compound being isocyanate and the second compound being amine or a compound having a hydroxyl group; transferring the component from the processing chamber to a heating chamber after substrate treatment is performed in the inner space; and heating the component so that depolymerization of the compound forming the film occurs.