Thin Film Ceramic Coating for Plasma Chamber Uniformity
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In the semiconductor industry, plasma etch reactors face challenges with non-uniform plasma resistant coatings on plasma generation chamber components, leading to varying etch rates and intra-wafer uniformity issues due to high porosity, thickness variations, and surface roughness in traditional coatings.
Innovation Solution
A plasma generation chamber with a faceplate and selectivity modulation device (SMD) featuring a thin film plasma resistant ceramic coating applied via ion assisted deposition (IAD) or physical vapor deposition (PVD), with a thickness of less than 30 microns, porosity of less than 1%, and thickness non-uniformity of less than 4%, providing consistent plasma corrosion resistance and uniform etch rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional plasma resistant coatings are applied to plasma generation chamber components, then corrosion resistance is provided, but coating uniformity and surface roughness deteriorate
Solution Approach 1:
The patent applies ion assisted deposition (IAD) or physical vapor deposition (PVD) processes to deposit ceramic coatings with controlled parameters achieving thickness uniformity better than 4% and porosity less than 1%, resolving the contradiction between corrosion resistance and coating uniformity
Solution Approach 2:
The patent uses composite ceramic coatings (such as yttria-stabilized zirconia, aluminum oxide, or silicon oxide) that combine plasma resistance with uniform deposition characteristics, achieving both corrosion protection and coating uniformity
2Reliability
If traditional plasma resistant coatings are applied to plasma generation chamber components, then corrosion resistance is provided, but surface roughness increases
Solution Approach 1:
The IAD/PVD deposition parameters are optimized to produce smooth surfaces with roughness less than 10 micro-inches by controlling deposition rate, ion energy, and substrate temperature, resolving the contradiction between corrosion resistance and surface smoothness
3Reliability
If thick plasma resistant coatings are applied to maintain low porosity, then corrosion resistance improves, but coating thickness uniformity deteriorates
Solution Approach 1:
The patent uses thin film coatings (5-30 microns) deposited via IAD/PVD that achieve low porosity (<1%) and high uniformity (<4% non-uniformity) simultaneously, resolving the contradiction between corrosion resistance through low porosity and thickness uniformity
4Ease of manufacture
If non-uniform coatings are used on plasma generation chamber components, then manufacturing complexity is reduced, but etch rate consistency deteriorates
Solution Approach 1:
The IAD/PVD process parameters are precisely controlled to achieve thickness uniformity better than 4%, ensuring etch rate consistency across wafers while maintaining manufacturability through a standardized deposition process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves high process stability and consistency between plasma generation chambers, with etch rates varying by less than 5% and intra-wafer uniformity of 95%-97%, meeting tightened customer specifications.
Implementation Method 1
The plasma resistant ceramic coating may be formed on the article using ion assisted deposition (IAD) or physical vapor deposition (PVD)
Implementation Method 2
The plasma resistant ceramic coating may be formed on the article using ion assisted deposition (IAD) or physical vapor deposition (PVD)
Implementation Method 3
The plasma generation chamber is to generate plasma for a processing chamber by accelerating radicals from the faceplate toward the SMD and through a plurality of holes in the SMD
Data Source
AI summary
A faceplate or a selectivity modulation device (SMD) for a plasma generation chamber has a plasma resistant ceramic coating on a surface of the faceplate or SMD, wherein the plasma resistant ceramic coating comprises a thickness of less than approximately 30 microns, a porosity of less than 1% and a thickness non-uniformity of less than 4%.


