Plasma Chamber Conductive Coating for Stable Substrate Processing

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Solution Overview

Problem

Plasma processing in chambers leads to damage of inner walls due to ion and radical collisions, and existing protective films can hinder electron exchange between plasma and electrodes, causing process instability.

Innovation Solution

A method involving coating the chamber's inner surfaces with a conductive film formed from a gas mixture containing carbon and hydrogen, which enhances electron exchange and protects the components from plasma damage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If a protective film is formed on the inner wall of the chamber, then damage to the inner wall from ion and radical collisions is reduced, but electron exchange between plasma and electrodes is hindered, causing process instability

Engineering Contradiction:
Improvedamage to inner wallVSAvoidprocess stability
Core Design Contradiction:
Object-affected harmful factorsVSReliability

Solution Approach 1:

The invention changes the electrical conductivity parameter of the protective film by selecting specific materials (tungsten, molybdenum, nickel, cobalt, or their alloys) that inherently possess conductive properties. This allows the film to simultaneously protect against plasma damage while maintaining electron exchange between plasma and electrodes, thus ensuring process stability without requiring additional structural modifications.

Inventive Principle:
Principle #35Parameter changes

2Loss of substance

If the protective film is made thicker to prevent ion penetration, then component consumption is reduced, but electron exchange between plasma and electrodes may be further hindered

Engineering Contradiction:
Improvecomponent consumptionVSAvoidelectron exchange
Core Design Contradiction:
Loss of substanceVSReliability

Solution Approach 1:

The invention changes the material composition parameter of the protective film to use conductive materials, which allows the film to maintain protective function at optimal thickness without excessive buildup. The conductive nature of these materials ensures that even at sufficient thickness to block ions, the film does not impede electron exchange, thus resolving the contradiction between component protection and plasma-electrode interaction.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention employs composite material strategies by using pure conductive metals (tungsten, molybdenum, nickel, cobalt) or their alloys as protective films. These materials combine protective properties against plasma erosion with inherent electrical conductivity, creating a composite functionality that simultaneously addresses both ion blocking and electron exchange requirements.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach stabilizes the plasma processing by preventing component consumption and maintaining desired process conditions, while ensuring the protective film is thick enough to prevent ion penetration.

Implementation Method 1

coating surfaces of components inside a chamber with a film having conductive properties by turning a first gas containing carbon and hydrogen into plasma inside the chamber

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 2

processing the substrate by turning a second gas into plasma inside the chamber

Methodology Applied
Scientific EffectPlasma: Plasma

Data Source

PatentUS11749508B2Plasma processing method
Publication Date: 2023.09.05 TOKYO ELECTRON LTD
  • US11749508B2 patent drawing
  • US11749508B2 patent drawing
  • US11749508B2 patent drawing

AI summary

A method of processing a substrate with plasma includes: coating surfaces of components inside a chamber with a film having conductive properties by turning a first gas containing carbon and hydrogen into plasma inside the chamber; loading the substrate into the chamber; and processing the substrate by turning a second gas into plasma inside the chamber in a state where the surfaces of the components inside the chamber are coated with the film having conductive properties.