Plasma Etching Chamber Magnetic Field Layout for Density Control
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Solution Overview
Problem
Current substrate processing apparatuses for semiconductor manufacturing face challenges in effectively controlling the plasma state during etching processes, which affects the precision and efficiency of substrate treatment.
Innovation Solution
The apparatus includes a chamber with a support member, an antenna for plasma excitation, and a magnetic field control system comprising inner and outer electromagnets to manage the plasma state, ensuring precise plasma density and distribution for improved etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plasma excitation methods are used, then plasma is generated, but plasma density and distribution control is insufficient
Solution Approach 1:
The magnetic field control system is segmented into multiple electromagnets (first and second electromagnets) positioned at different locations around the processing chamber. Each electromagnet independently controls magnetic field strength in its respective region, enabling localized plasma density adjustment and resolving the contradiction between precision control and system complexity through modular design.
Solution Approach 2:
The system applies local quality by creating non-uniform magnetic field distributions through strategically positioned electromagnets. Different regions of the processing chamber receive tailored magnetic field strengths to optimize plasma density locally, allowing precise control of plasma properties in specific areas without uniformly increasing system complexity throughout the entire apparatus.
2Duration of action of moving object
If plasma processing is performed, then substrate etching is achieved, but electron residence time is insufficient
Solution Approach 1:
The system dynamically adjusts magnetic field strength through controllable electromagnets to optimize electron confinement. By varying the magnetic field in real-time based on processing requirements, the system extends electron residence time to enhance ionization reactions while maintaining etching productivity, resolving the contradiction between duration and efficiency through dynamic parameter control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the control over plasma behavior, increasing the residence time of electrons and ionization reactions, leading to improved heating efficiency and plasma density, thereby enhancing the precision and efficiency of substrate processing.
Implementation Method 1
an antenna providing energy for plasma excitation into the processing space
Implementation Method 2
inner and outer electromagnets disposed outside the processing space and facing the processing space with the cover member therebetween
Implementation Method 3
The plasma is an ionized gas state composed of ions, electrons, radicals, and the like
Implementation Method 4
During the processing treatments, the substrate is heated by the plasma
Data Source
AI summary
A substrate processing apparatus according to an embodiment includes: a chamber providing a processing space; a support member disposed in the processing space and configured to support a substrate during a process treatment; an antenna providing energy for plasma excitation into the processing space; and an inner electromagnet disposed outside the processing space.