Plasma Chamber Cleaning Layout for Dust-Free Deposit Removal
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Solution Overview
Problem
Conventional deposit scraping methods in semiconductor manufacturing apparatuses produce large quantities of dust particles, affecting subsequent production and the operating environment, and can damage chamber coatings over time.
Innovation Solution
A semiconductor manufacturing apparatus with electrodes in the chamber sidewall that ionize a treating gas to generate plasma for efficient and precise cleaning of deposits, using high-frequency and low-frequency signals to control the plasma for effective etching and cleaning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a deposit scraping method is employed for cleaning, then deposit removal is achieved, but a large quantity of dust particles are produced
Solution Approach 1:
The patent replaces the mechanical scraping system with a plasma-based cleaning system. Electrodes generate plasma that chemically reacts with and removes deposits through ionization and reactive species, eliminating the mechanical contact that generates dust particles while maintaining effective deposit removal.
Solution Approach 2:
The patent changes the cleaning mechanism from mechanical force to plasma chemical reactions. By controlling plasma parameters such as power, gas composition, and pressure, the system achieves effective deposit removal without the harmful mechanical dust generation associated with traditional scraping methods.
2Productivity
If conventional scrapers are used for long-term cleaning, then deposit removal is maintained, but chamber coatings are thinned and scratched
Solution Approach 1:
The patent replaces mechanical scrapers that physically contact and damage chamber coatings with a plasma cleaning system. The plasma removes deposits through chemical reactions and ion bombardment without mechanical contact, preserving coating integrity while maintaining continuous cleaning capability throughout the chamber including hard-to-reach areas.
Solution Approach 2:
The patent introduces plasma as an intermediary cleaning agent between the cleaning system and chamber surfaces. The plasma acts as a non-contact mediator that transfers cleaning action through reactive species and ion energy, eliminating direct mechanical contact between scrapers and chamber coatings, thus preventing thinning and scratching.
3Object-generated harmful factors
If a plasma cleaning method is used, then dust particle generation is eliminated, but device complexity increases
Solution Approach 1:
The patent replaces simple mechanical scrapers with a plasma generation system comprising electrodes and signal generators. While this increases device complexity, it eliminates dust particle generation entirely by using non-contact plasma cleaning, achieving a trade-off where moderate complexity increases yield significant improvements in cleanliness and environmental safety.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The plasma cleaning method effectively removes deposits without generating dust particles, reducing damage to the apparatus and ensuring a safer working environment while maintaining high precision and efficiency.
Implementation Method 1
configured to ionize a treating gas coming from the inner chamber to generate plasma
Implementation Method 2
generate plasma so as to clean off deposit produced in the inner chamber
Data Source
AI summary
The present application discloses a semiconductor manufacturing apparatus, including: a chamber including an inner chamber, an outer chamber and a passage communicating the inner chamber with the outer chamber, the passage being located between the inner chamber and a chamber sidewall; and one or more electrodes disposed in the chamber sidewall and configured to ionize a treating gas coming from the inner chamber to generate plasma so as to clean off deposit produced in the inner chamber.