Substrate Plasma Chamber Fluid Injection for Uniform Field Distribution

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Solution Overview

Problem

Existing plasma apparatuses suffer from asymmetric plasma field distribution, leading to non-uniform etching or deposition processes during semiconductor and display device manufacturing.

Innovation Solution

A substrate processing apparatus and method that control the positions and proportions of conductive and non-conductive fluid injection using pumps and valves to adjust the plasma field distribution.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a plasma apparatus uses conventional RF power supply to generate plasma field, then the plasma field is formed, but the plasma field distribution becomes asymmetric leading to non-uniform etching or deposition

Engineering Contradiction:
Improveuniformity of etching or depositionVSAvoidplasma field distribution control
Core Design Contradiction:
Manufacturing precisionVSEase of operation

Solution Approach 1:

The patent introduces a conductive fluid as an intermediary substance injected into the plasma chamber to modify and control the plasma field distribution. The conductive fluid acts as a mediator between the RF power supply and the plasma, enabling adjustment of plasma density and uniformity across the substrate surface without changing the fundamental RF generation mechanism

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the physical and chemical parameters of the plasma environment by injecting conductive fluid at controlled positions and proportions. By varying the injection parameters (position, flow rate, composition), the plasma field distribution can be adjusted to achieve uniform plasma across the substrate, directly addressing the uniformity issue

Inventive Principle:
Principle #35Parameter changes

2Productivity

If the plasma field is asymmetrically distributed, then the plasma process proceeds, but the etching or deposition becomes non-uniform across the substrate

Engineering Contradiction:
Improveplasma process efficiencyVSAvoiduniformity of etching or deposition
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent applies local quality by injecting conductive fluid at specific localized positions within the plasma chamber rather than uniformly throughout. This targeted injection creates localized modifications to the plasma field in asymmetric regions, balancing the overall plasma distribution across different areas of the substrate to achieve uniform processing

Inventive Principle:
Principle #3Local quality

3Adaptability or versatility

If conductive fluid is injected to control plasma field, then plasma field distribution becomes adjustable, but the system complexity increases with pumps and valves

Engineering Contradiction:
Improveplasma field adjustabilityVSAvoidfluid injection system
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The conductive fluid injection system serves multiple functions: it controls plasma field distribution, adjusts plasma density, and compensates for asymmetric field patterns. This multi-functionality reduces the need for separate systems for each function, thereby limiting the increase in overall system complexity while achieving high adaptability

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution allows for the formation of a freely adjustable plasma field, ensuring uniform plasma processes and minimizing component damage by compensating for asymmetry.

Implementation Method 1

when radio frequency (RF) power is supplied, a gas inside a chamber may be affected by an electromagnetic field to form a plasma field

Methodology Applied
Scientific EffectElectromagnetic field: Electromagnetic Induction

Implementation Method 2

a gas inside a chamber may be affected by an electromagnetic field to form a plasma field

Methodology Applied
Scientific EffectPlasma formation: Plasma

Data Source

PatentUS12456610B2Substrate processing apparatus and substrate processing method
Publication Date: 2025.10.28 SAMSUNG ELECTRONICS CO LTD
  • US12456610B2 patent drawing
  • US12456610B2 patent drawing
  • US12456610B2 patent drawing

AI summary

A substrate processing apparatus is provided. The substrate processing apparatus includes a chamber comprising a support, the support configured to have mounted thereon a substrate; at least one channel disposed in the chamber and into which a conductive fluid or a non-conductive fluid is configured to be injected; and a control unit. The control unit includes a first pump and a second pump configured to respectively supply the conductive fluid and the non-conductive fluid to the at least one channel; and a first valve configured to receive the conductive fluid and the non-conductive fluid from the first pump and the second pump, respectively, and control proportions at which the conductive fluid and the non-conductive fluid are injected into the at least one channel.