Induction Coil Plasma Chamber for Low-Temperature Gas Activation
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Solution Overview
Problem
Existing semiconductor processing methods are inefficient, non-uniform, and costly, with limited throughput and capacity, and face challenges in gas activation and dopant concentration, particularly at low processing temperatures, leading to non-uniform film growth and hindered device performance.
Innovation Solution
A processing chamber equipped with a flow module, heat sources, substrate support, and plasma generator, featuring an induction coil for gas activation, and a flange with embedded opaque material, which includes LEDs for targeted wavelength emission to enhance deposition processes and a plasma reactor with an induction coil for uniform plasma generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If relatively higher processing temperatures are used to activate gases, then gas activation is improved, but unintended dopant diffusion occurs and device performance is hindered
Solution Approach 1:
The patent changes the physical state of the processing environment by introducing plasma, transforming the chemical and physical parameters of the gas phase. This allows gas activation to occur at lower temperatures through plasma-enhanced chemical vapor deposition (PECVD), resolving the contradiction between achieving sufficient gas activation and avoiding thermal damage.
Solution Approach 2:
The patent replaces thermal activation (mechanical heating) with plasma activation (electromagnetic field and chemical reaction). By using plasma to activate precursor gases, the system achieves effective gas activation without relying on high thermal energy, thus preventing dopant diffusion while maintaining device performance.
2Reliability
If conventional heating methods are used, then processing can be performed, but uniformity of material deposition is poor
Solution Approach 1:
The patent introduces a susceptor that creates localized electromagnetic field interactions with the plasma, enabling spatially selective heating and activation. This local quality enhancement ensures uniform plasma distribution and consistent material deposition across the substrate surface, resolving the uniformity issue while maintaining processing capability.
Solution Approach 2:
The patent employs dynamic plasma generation through RF-powered induction coils that can be modulated and controlled in real-time. This dynamic control allows for optimized plasma density and distribution patterns, ensuring uniform material deposition while maintaining flexible processing conditions.
3Ease of operation
If conventional processing methods are used, then operations can be performed, but throughput and capacity are limited
Solution Approach 1:
The patent implements continuous plasma generation and material deposition processes, eliminating idle time between processing steps. The plasma reactor enables uninterrupted deposition cycles with rapid chamber turnaround, significantly increasing throughput while maintaining ease of operation through automated plasma control systems.
Solution Approach 2:
The patent changes the processing regime from sequential thermal steps to parallel plasma-enhanced processes. By utilizing plasma chemistry to enable lower temperature, faster deposition rates, the system increases capacity and throughput while simplifying operational complexity through integrated plasma-reactor design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Facilitates reliable gas activation at low temperatures, improves uniformity, reduces gas consumption, and enhances device performance with increased throughput and uniform film growth, while minimizing unintended dopant diffusion.
Implementation Method 1
The plasma generator is an induction coil
Implementation Method 2
An induction coil is embedded in the opaque material of the flange
Implementation Method 3
facilitates reliable gas activation at low temperatures
Data Source
AI summary
The present disclosure relates to heaters and plasma generators for gas activation, and related chamber components, methods, and processing chambers for semiconductor manufacturing. The processing chamber includes a chamber body comprising a flow module, a window, one or more heat sources, a substrate support, and a plasma generator. The window and the chamber body at least partially defining a processing volume. The one or more heat sources are operable to heat the processing volume. The substrate support is disposed in the processing volume. The plasma generator disposed at least partially around the processing volume. The window further includes a flange. The flange includes an opaque material. An induction coil is embedded in the opaque material of the flange.