Plasma Processing Chamber Height Control for Uniform Wafer Treatment
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Solution Overview
Problem
The uneven density of plasma generated on a substrate surface during plasma-excited processing leads to variations in semiconductor device performance due to non-uniform substrate processing.
Innovation Solution
A method involving a substrate processing apparatus with a resonance coil surrounding the plasma generation space and a susceptor positioned below the coil's lower end, where the substrate is processed with a high-frequency power-supplied gas, ensuring uniform plasma density by adjusting the substrate's height and using an impedance adjustment electrode to control plasma uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma is generated on the substrate surface using a coil, then the substrate processing can be performed, but the plasma density becomes uneven leading to non-uniform processing
Solution Approach 1:
The patent introduces a vertical height dimension parameter (distance between substrate and coil lower end) to control plasma density uniformity. By positioning the substrate at a specific height range below the coil lower end, the plasma density distribution on the substrate surface is optimized, transforming a 2D surface uniformity problem into a 3D spatial positioning solution.
Solution Approach 2:
The patent changes the spatial parameter (height position) of the substrate relative to the coil to optimize plasma density uniformity. Specifically, the substrate is positioned at a height of 50-150mm below the coil lower end, which fundamentally alters the plasma generation characteristics and achieves uniform plasma distribution across the substrate surface.
2Productivity
If the substrate is positioned closer to the coil for better plasma generation, then processing efficiency improves, but plasma density uniformity deteriorates
Solution Approach 1:
The patent optimizes the height parameter to simultaneously achieve good plasma generation efficiency and uniformity. The specific height range of 50-150mm below the coil lower end is determined to balance plasma density (affecting efficiency) and plasma distribution uniformity (affecting quality), resolving the trade-off between productivity and precision.
Solution Approach 2:
By utilizing the vertical dimension (height adjustment) as a control parameter, the patent resolves the horizontal uniformity problem. The substrate is positioned in a specific vertical range relative to the coil, which naturally optimizes both plasma generation intensity and spatial distribution uniformity across the substrate surface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach achieves improved in-plane uniformity of the substrate process, reducing plasma density deviations and enhancing the uniformity of the semiconductor device manufacturing process, thereby stabilizing device performance.
Implementation Method 1
plasma-exciting the processing gas supplied to the plasma generation space by supplying a high-frequency power to the coil to resonate the coil
Implementation Method 2
supplying a high-frequency power to the coil to resonate the coil
Data Source
AI summary
A substrate processing apparatus comprising: a substrate process chamber having a plasma generation space where a processing gas is plasma-excited and a substrate processing space communicating with the plasma generation space; a substrate mounting table installed inside the substrate processing space and for mounting a substrate; an inductive coupling structure provided with a coil installed to be wound around an outer periphery of the plasma generation space; a substrate support table elevating part for raising and lowering the substrate mounting table; a gas supply part for supplying the processing gas to the plasma generation space; and a controller for controlling the substrate support table elevating part, based on a power value of a high-frequency power supplied to the coil, so that the substrate mounted on the substrate mounting table is positioned at a target height according to the power value and spaced apart from a lower end of the coil.