Plasma Chamber Materials That Preserve HF for Silicon Film Etching
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Solution Overview
Problem
Existing plasma processing technologies face challenges in efficiently etching silicon-containing films due to the consumption of hydrogen fluoride (HF) species by the chamber materials, leading to reduced etching rates and potential damage to the chamber components.
Innovation Solution
A plasma processing apparatus is designed with a chamber made of materials such as carbon, tungsten, molybdenum, ruthenium, titanium nitride, samarium, and yttrium, which exhibit low reactivity with HF species, thereby suppressing their consumption and enhancing the etching efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional chamber materials are used, then the chamber structure is simple and easy to manufacture, but the etching rate decreases due to HF species consumption
Solution Approach 1:
The patent changes the material parameter of the chamber from conventional materials (silicon, aluminum) to low-reactivity materials (carbon, tungsten, molybdenum, ruthenium, titanium nitride, samarium, yttrium). This material parameter change reduces the chemical reactivity with HF species, preventing consumption of etching radicals and maintaining high etching rates throughout the processing cycle.
Solution Approach 2:
The patent creates a chemically inert environment by selecting chamber materials that do not react with HF species. The low-reactivity materials effectively create an inert chemical environment within the chamber, preventing unwanted side reactions and ensuring that HF species remain available for the intended etching process.
2Reliability
If conventional chamber materials are used, then the chamber is easy to manufacture, but the chamber components suffer from damage due to chemical reactivity
Solution Approach 1:
The patent changes the chemical stability parameter of the chamber materials by selecting substances with low reactivity toward HF species. This parameter change enhances the chemical resistance and durability of chamber components, preventing degradation and damage during plasma processing operations.
Solution Approach 2:
The patent avoids using conventional materials that would require frequent replacement due to chemical damage. By selecting durable, low-reactivity materials, the chamber components become long-lasting and reliable, reducing maintenance frequency and operational downtime.
3Productivity
If high reactivity materials are used in the chamber, then the etching process is more aggressive, but the HF species are consumed rapidly reducing etching efficiency
Solution Approach 1:
The patent changes the reactivity parameter of chamber materials to minimize HF species consumption. This parameter optimization ensures that the concentration of HF species remains high throughout the etching process, maintaining consistent etching efficiency without rapid depletion of reactive species.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of low-reactivity materials in the plasma processing apparatus significantly increases the etching rate of silicon-containing films by maintaining a higher concentration of HF species in the plasma, while also protecting the chamber components from damage.
Implementation Method 1
a plasma generation unit that generates a plasma from the process gas
Implementation Method 2
materials such as carbon, tungsten, molybdenum, ruthenium, titanium nitride, samarium, and yttrium, which exhibit low reactivity with HF species, thereby suppressing their consumption
Data Source
AI summary
A plasma processing apparatus includes: a chamber; a substrate support provided within the chamber; a gas supply port that is connected to a source of a processing gas containing hydrogen fluoride gas, and supplies the processing gas into the chamber; and a plasma generation unit that generates a plasma from the processing gas. At least a portion of the chamber is made of a material containing at least one material selected from carbon, tungsten, molybdenum, ruthenium, titanium nitride, samarium, and yttrium.