Plasma Chamber Electrode and Magnet Layout for Low-Temperature Epitaxy
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Solution Overview
Problem
Existing semiconductor processing operations are inefficient, non-uniform, and limited in capacity and throughput, with issues such as non-uniform film growth, hindered device performance, and unintended dopant diffusion, particularly at low processing temperatures.
Innovation Solution
A processing chamber design incorporating heat sources, electrodes, and magnetic fields to generate plasma for uniform gas activation and deposition, allowing for efficient and modular epitaxial deposition at low temperatures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional heating methods are used for epitaxial deposition, then processing can be performed, but uniformity of film growth is poor and processing temperatures must be relatively high
Solution Approach 1:
The patent replaces conventional thermal heating methods with plasma-based processing. The plasma is generated by applying radio frequency power between a first electrode (capacitively coupled) and an inductively coupled coil system, enabling low-temperature epitaxial deposition with improved uniformity. This substitution of thermal field with electromagnetic field allows precise control of reaction conditions without requiring high temperatures.
Solution Approach 2:
The patent changes the fundamental processing parameters by introducing plasma as the activation mechanism instead of relying solely on thermal energy. By controlling plasma power, gas flow rates, and pressure, the system achieves uniform film growth at lower temperatures. The dual electrode configuration allows independent optimization of plasma generation and substrate heating parameters.
2Productivity
If conventional processing operations are used, then deposition can be performed, but throughput and capacity are limited
Solution Approach 1:
The patent enables continuous processing by maintaining stable plasma conditions throughout the deposition cycle. The inductively coupled plasma system provides continuous energy input to the gas phase, ensuring uninterrupted reaction and film growth. This continuous plasma generation eliminates idle heating periods and allows faster cycle times while maintaining quality.
Solution Approach 2:
The system performs preliminary plasma activation of the substrate surface before actual deposition begins. This pre-treatment step, enabled by the flexible electrode configuration, prepares the surface for optimal film adhesion and uniformity, reducing the need for rework and extending processing time effectively.
3Manufacturing precision
If conventional electrode configurations are used, then plasma can be generated, but uniformity of gas activation is limited
Solution Approach 1:
The patent divides the plasma generation system into two distinct electrode components: a capacitively coupled first electrode for initial plasma ignition and a second electrode coupled to the substrate support for maintaining plasma. This segmentation allows each electrode to be optimized for its specific function, achieving uniform gas activation across the substrate surface while keeping individual electrode designs relatively simple.
Solution Approach 2:
The patent introduces an inductively coupled coil system as an intermediary between the power source and the plasma. This coil generates a time-varying magnetic field that induces eddy currents in the plasma, providing uniform energy distribution across the processing volume. This intermediary approach simplifies the electrode design while achieving superior uniformity compared to direct electrode contact methods.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances uniformity of gas activation and film growth, reduces dopant diffusion, and increases throughput while maintaining device performance, with improved modularity and reduced gas consumption.
Implementation Method 1
applying a power to the processing volume while flowing the gas to generate a plasma
Implementation Method 2
one or more heat sources operable to heat the processing volume
Implementation Method 3
a plurality of magnets configured to generate a magnetic field across at least a section of the processing volume
Data Source
AI summary
The present disclosure relates to electrode configurations and magnet configurations for processing chambers, and related methods and apparatus, for semiconductor manufacturing. In one or more embodiments, a processing chamber applicable for use in semiconductor manufacturing includes one or more sidewalls, a plate at least partially defining a processing volume, and a substrate support disposed in the processing volume. The processing chamber includes one or more heat sources operable to heat the processing volume, a first electrode disposed outwardly of the processing volume, and a second electrode coupled to the substrate support.