Plasma Chamber Component Oxidation and Halogen Cleaning
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Solution Overview
Problem
In plasma processing, metal-containing deposits adhering to components in the process chamber pose a challenge as they deteriorate the etching process over time and are difficult to remove, especially when they accumulate on components that cannot be easily subjected to bias voltage for sputter etching, leading to wear of conductive components when treated with halogen gases.
Innovation Solution
A plasma processing method involving an oxidation step to form a silicon dioxide layer on conductive components, followed by a treatment step using halogen-containing gases to remove metal deposits from components at ground or floating potential, thereby reducing wear on conductive components and effectively removing metal deposits while maintaining the integrity of the plasma processing apparatus.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If halogen-containing gas is used to treat components at ground or floating potential to remove metal deposits, then metal deposit removal effectiveness is improved, but wear of conductive components increases
Solution Approach 1:
An oxide layer is formed on the conductive components before the halogen-containing gas treatment step. This preliminary oxidation creates a protective barrier that prevents direct contact between the halogen gas and the conductive material, thereby reducing wear while maintaining the ability to remove metal deposits from components at ground or floating potential
Solution Approach 2:
The oxide layer is selectively formed only on the conductive components that require protection, rather than treating all components uniformly. This localized treatment allows the conductive surfaces to be protected from halogen gas wear while other components remain accessible to the cleaning action of the halogen plasma
2Reliability
If conventional plasma treatment is applied to remove metal deposits from all components, then metal deposit removal is improved, but selectivity between different components deteriorates
Solution Approach 1:
The method applies different treatments to different components based on their electrical properties. Conductive components receive preliminary oxidation treatment to protect them, while components at ground or floating potential are treated with halogen-containing gas for metal deposit removal. This differentiated approach maintains high selectivity and prevents unwanted wear on conductive surfaces
Solution Approach 2:
The oxide layer acts as an intermediary substance that mediates between the halogen-containing gas and the conductive components. It allows the halogen gas to effectively remove metal deposits from components at ground or floating potential while preventing direct interaction with and wear of the conductive components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively removes metal deposits from components at ground or floating potential while minimizing wear on conductive components, improving the selectivity and reducing the etching rate of the first component, thus enhancing the overall plasma processing efficiency and preventing degradation of the etching process.
Implementation Method 1
forming an oxide layer on the surface of the first component by converting an oxygen-containing gas into plasm
Implementation Method 2
forming an oxide layer on the surface of the first component by converting an oxygen-containing gas into plasm
Implementation Method 3
treating a surface of the second component by converting a halogen-containing gas into plasm
Implementation Method 4
treating a surface of the second component by converting a halogen-containing gas into plasm
Data Source
AI summary
A plasma processing method is performed by a plasma processing apparatus that includes a process chamber, a conductive first component that is disposed in the process chamber and at least a surface of which is covered with a conductive silicon material, and a second component that is disposed in the process chamber and is at a ground potential or a floating potential with respect to an electric potential of plasma. The method includes forming an oxide layer on the surface of the first component by converting an oxygen-containing gas into plasm, and treating a surface of the second component by converting a halogen-containing gas into plasm.