Plasma Strip Chamber Passivation for Ash Rate Recovery
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Solution Overview
Problem
The contamination of gas distribution plates in plasma processing chambers leads to process drift, poor substrate repeatability, and significant degradation of ash rate, limiting the number of substrates that can be processed between cleanings and increasing costs due to time-consuming cleaning procedures and aggressive gas use.
Innovation Solution
A method involving the formation of a silicon chloride residue on substrates, which is then evaporated and deposited onto chamber surfaces, followed by exposure to an oxidizing environment to convert it into a silicon oxide passivation layer, thereby reducing contamination and extending the service interval of the plasma processing chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If cleaning operations are performed frequently to remove contamination from the gas distribution plate, then contamination levels are reduced, but productivity and process throughput are limited due to time consumption and aggressive gas usage
Solution Approach 1:
The patent converts the harmful silicon chloride residue into a beneficial silicon oxide passivation layer by exposing it to an oxidizing environment. This passivation layer protects the gas distribution plate from further contamination by volatile reaction products and byproducts, thereby reducing the frequency of cleaning operations needed while maintaining process reliability.
Solution Approach 2:
The patent performs preliminary protective action by forming the silicon oxide passivation layer on the gas distribution plate before significant contamination occurs. This preventive measure reduces the need for frequent cleaning operations, thereby maintaining productivity without compromising contamination control.
2Reliability
If the gas distribution plate is cleaned by removing it from the chamber, then contamination is removed, but chamber downtime increases due to breaking vacuum and replacing the plate
Solution Approach 1:
The patent enables the gas distribution plate to self-protect by forming a silicon oxide passivation layer that prevents contamination accumulation. This self-service mechanism eliminates the need for frequent manual removal and cleaning operations, thereby reducing chamber downtime while maintaining plate cleanliness.
Solution Approach 2:
The silicon chloride residue, which would normally be considered harmful contamination, is converted into a beneficial silicon oxide passivation layer that protects the gas distribution plate. This conversion reduces the need for plate removal and cleaning, thereby minimizing chamber downtime.
3Reliability
If aggressive cleaning gases are used to remove contamination, then contamination is removed, but chamber components are attacked and degraded
Solution Approach 1:
The patent converts the harmful silicon chloride residue into a protective silicon oxide passivation layer through oxidation. This approach eliminates the need for aggressive cleaning gases that would attack and degrade chamber components, while still achieving effective contamination control.
Solution Approach 2:
The patent applies preliminary protective action by forming the silicon oxide passivation layer that prevents contamination accumulation on the gas distribution plate. This preventive measure eliminates the need for subsequent aggressive cleaning operations that would damage chamber components.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method recovers up to 90% of the original ash rate by forming a silicon oxide passivation layer over contaminated chamber surfaces, reducing the need for frequent chamber cleaning and minimizing downtime, thus enhancing productivity and extending the service interval of the plasma processing chamber.
Implementation Method 1
evaporating the silicon chloride residue from the substrate
Implementation Method 2
depositing the evaporated silicon chloride on one or more interior surfaces in the processing volume
Implementation Method 3
exposing the deposited silicon chloride to an oxidizing environment to convert the deposited silicon chloride to a silicon oxide passivation layer
Data Source
AI summary
A method for recovering ashing rate in a plasma processing chamber includes positioning a substrate in a processing volume of a processing chamber, wherein the substrate has a silicon chloride residue formed thereon. The method further includes evaporating the silicon chloride residue from the substrate. The method further includes depositing the evaporated silicon chloride on one or more interior surfaces in the processing volume. The method further includes exposing the deposited silicon chloride to an oxidizing environment to convert the deposited silicon chloride to a silicon oxide passivation layer. The oxidizing environment can comprise an oxygen-containing plasma, oxygen radicals, or a combination thereof.