Plasma Chamber Power Matching for Processing Uniformity
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Solution Overview
Problem
Plasma chambers used for substrate processing often result in non-uniform processing due to differences in etching rates and material deposition, leading to variations in processing conditions over time, which affects the uniformity of wafer processing across different chambers.
Innovation Solution
A method and system for chamber matching using a power control mode, where relationships between measured variables and power are determined in one plasma chamber and applied to another to adjust power settings, ensuring consistent processing conditions across chambers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If different plasma chambers are used for substrate processing, then processing capacity is increased, but processing uniformity deteriorates due to variations in etching rates and material deposition
Solution Approach 1:
The patent applies parameter changes by adjusting the power provided to different plasma chambers based on measured relationships between power and processing variables. Each chamber receives customized power levels to compensate for individual variations, thereby achieving uniform processing conditions across multiple chambers while maintaining increased processing capacity
Solution Approach 2:
The patent implements feedback by measuring a variable in each plasma chamber, determining a relationship between that variable and power, and using this relationship to identify and apply power adjustments. This closed-loop feedback mechanism ensures that each chamber is tuned to achieve consistent processing uniformity across the fleet of chambers
2Manufacturing precision
If the same plasma chamber is used for substrate processing, then processing uniformity is maintained, but productivity is reduced due to limited processing capacity
Solution Approach 1:
The patent enables multiple plasma chambers to operate with customized power parameters that simulate the performance characteristics of a single reference chamber. This allows the system to scale processing capacity across multiple chambers while maintaining the processing uniformity that would otherwise require limiting operations to a single chamber
3Device complexity
If power settings are not adjusted between chambers, then device complexity is reduced, but processing uniformity deteriorates due to RF transmission line losses and chamber variations
Solution Approach 1:
The patent determines optimal power settings for each chamber by measuring the relationship between power and a processing variable, then applies these customized power parameters to compensate for RF transmission line losses and chamber-specific variations. This automated parameter adjustment achieves processing uniformity without requiring complex manual calibration procedures
Solution Approach 2:
The system performs self-service by automatically measuring the power-variable relationship in each chamber and determining the appropriate power adjustments without requiring extensive manual intervention. This self-characterization approach simplifies the overall system complexity while achieving uniform processing across chambers
Data Source
AI summary
Systems and methods for performing chamber matching are described. One of the methods for performing chamber matching includes executing a first test within a first plasma chamber to measure a variable and executing a second test within a second plasma chamber to measure the variable. The first and second tests are executed based on one recipe. The method further includes determining a first relationship between the variable measured with the first test and power provided during the first test, determining a second relationship between the variable measured with the second test and power provided during the second test, and identifying power adjustment to apply to the second plasma chamber during a subsequent processing operation based on the first and second relationships. The power adjustment causes the second plasma chamber to perform the processing operation in a processing condition determined using the first plasma chamber.