Plasma Chamber Purge Control for Particle Growth During Deposition
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Solution Overview
Problem
The formation and suspension of sub-micrometer particles during plasma deposition processes in semiconductor manufacturing cause contamination and yield loss, which current methods like hardware changes and burn-in processes are inadequate.
Innovation Solution
A method involving plasma purges using gases like Ar, N2, or N2O is implemented during plasma deposition to prevent particle formation and suspension, monitored by criteria such as power, pressure, and timing, maintaining a stable environment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma deposition process is performed to form film on substrate, then deposition efficiency is improved, but particle growth and contamination increase
Solution Approach 1:
The patent implements periodic plasma purges during the deposition process. The system alternates between deposition phases and purge phases, where during purge phases, plasma is generated without substrate bias to actively remove particles from the chamber. This periodic action maintains high deposition efficiency while periodically eliminating particle contamination.
Solution Approach 2:
The patent converts the harmful plasma environment that generates particles into a beneficial cleaning mechanism. By generating plasma during purge cycles without substrate deposition, the system uses the same plasma chemistry that creates particles to instead activate and remove existing particles from chamber surfaces and suspension, transforming the harmful effect into a self-cleaning benefit.
2Object-generated harmful factors
If plasma purges are performed frequently to reduce particle growth, then particle contamination is reduced, but manufacturing productivity decreases
Solution Approach 1:
The patent applies partial purges rather than complete process interruptions. The plasma purge duration and intensity are optimized to achieve sufficient particle removal with minimal impact on overall deposition rate. By applying just enough purge action to control particles without excessive processing time, the system maintains high productivity while effectively reducing contamination.
Solution Approach 2:
The deposition process continues uninterrupted with integrated purge cycles rather than stopping for separate cleaning operations. The plasma purges are performed in-situ during the deposition sequence, maintaining continuous manufacturing flow. This eliminates idle time between deposition and cleaning operations, preserving productivity while continuously managing particle levels.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Reduces particle growth by 40% to 90% by preventing particle formation and suspension, ensuring cleaner deposition processes without disrupting the manufacturing flow.
Implementation Method 1
The plasma deposition process causes a film to grow on an article
Implementation Method 2
the use of plasma within the chamber may function to increase the chemical reaction
Implementation Method 3
performing the at least one plasma purge using a gas
Data Source
AI summary
Disclosed herein is a method for controlling particle growth in a processing chamber. The method includes performing at least one plasma deposition process using a precursor to form a layer on a substrate in a chamber. The method also includes providing a power to the chamber during the at least one plasma deposition process and monitoring at least one criteria to determine when at least one plasma purge is to be performed. The method further includes responsive to the at least one criteria indicating that the at least one plasma purge is to be performed, performing the at least one plasma purging by applying a gas into the chamber.