Plasma Chamber Temperature Conditioning for Stable Multi-Lot Processing
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Solution Overview
Problem
Plasma processing apparatuses face challenges in maintaining consistent internal chamber temperatures during multiple substrate processing lots, leading to fluctuations in processing performance due to uncontrolled temperature variations.
Innovation Solution
A temperature control method that involves measuring pre-processing temperatures, determining control conditions based on target temperatures, and adjusting internal chamber temperatures using plasma and cooling gases to stabilize the environment before substrate processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma processing is performed for multiple substrate lots, then productivity is improved, but temperature fluctuations in the chamber occur leading to processing performance variations
Solution Approach 1:
The patent applies preliminary action by measuring the pre-processing temperature of internal components before substrate processing and using this measurement to determine appropriate temperature control conditions. This advance preparation allows the system to adjust heating or cooling parameters before each processing lot, ensuring consistent temperatures across multiple lots without requiring continuous complex control during processing.
Solution Approach 2:
The patent implements feedback by measuring the actual pre-processing temperature of internal components and using this measured value to determine temperature control conditions. The system compares the measured temperature with target values and adjusts plasma heating or gas cooling parameters accordingly, creating a closed-loop control system that maintains reliability across multiple processing lots.
2Stability of the object's composition
If temperature control is performed using plasma heating and gas cooling, then temperature stability is improved, but device complexity increases
Solution Approach 1:
The patent applies self-service by using the chamber's own plasma processing operations to provide heating, eliminating the need for separate heating systems. The plasma generated during substrate processing inherently heats the internal components, and the system leverages this self-heating effect while supplementing with gas cooling only when necessary to achieve target temperatures.
Solution Approach 2:
The patent implements multi-functionality by using the same plasma source for both substrate processing and internal component heating. The processing gas serves dual purposes: as the plasma medium for substrate treatment and as the heating source for temperature control, reducing the need for dedicated heating and cooling infrastructure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively suppresses temperature fluctuations and improves substrate processing performance by ensuring consistent internal component temperatures, thereby stabilizing processing outcomes across multiple lots.
Implementation Method 1
increasing the temperature of the internal component by a first plasma of a first processing gas
Implementation Method 2
cooling the internal component by purging the chamber with a cooling gas
Implementation Method 3
cooling the internal component by purging the chamber with a cooling gas
Data Source
AI summary
A temperature control method of a chamber of a plasma processing apparatus includes: (a) providing a substrate in the chamber; (b) measuring a pre-processing temperature of an internal component of the chamber; (c) determining a temperature control condition based on a difference between the pre-processing temperature measured in (b) and a target temperature that has been preset in advance; (d) performing a process including at least one of increasing the temperature of the internal component by a first plasma of a first processing gas and cooling the internal component by purging the chamber with a cooling gas, based on the temperature control condition; and (e) processing the substrate with a second plasma of a second processing gas.