Plasma Chlorine Replacement in Thin Film Transistors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Chlorine residuals from plasma etching processes corrode surfaces and can cause re-etching, affecting the electric properties of thin film transistors and increasing manufacturing time.
Innovation Solution
A method involving a reduced volume ratio of fluorine-bearing gases to oxygen gases in a plasma process to minimize ionic concentration, replacing chlorine atoms on film layers while avoiding re-etching and reducing processing time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If fluorine-bearing gas is used in plasma process to replace chlorine atoms, then corrosion prevention is improved, but re-etching occurs affecting electric properties
Solution Approach 1:
The patent changes the concentration parameter of fluorine-bearing gas from the conventional 1/10 to 1/6 ratio to a reduced ratio of 1/20 to 1/10. This parameter adjustment reduces the ionic concentration of fluorine in the plasma, preventing re-etching of the film layer while maintaining sufficient fluorine ions for chlorine atom replacement and corrosion prevention.
2Object-affected harmful factors
If pure oxygen plasma process is used to replace chlorine atoms, then re-etching is avoided, but manufacturing time increases
Solution Approach 1:
The patent introduces fluorine-bearing gas at a reduced concentration ratio (1/20 to 1/10) to enhance the replacement efficiency of chlorine atoms compared to pure oxygen process. This allows the manufacturing time to be reduced from the conventional 30-45 seconds while still preventing re-etching, as the optimized fluorine ion concentration accelerates the chlorine removal process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively prevents corrosion and re-etching, preserves the electric properties of thin film transistors, and reduces manufacturing time compared to conventional methods, thereby enhancing production yield and efficiency.
Implementation Method 1
dissociating the gas mixture through a plasma process to form an ionic mixture
Implementation Method 2
dissociating the gas mixture through a plasma process to form an ionic mixture
Implementation Method 3
bombarding the ionic mixture onto a surface of the film layer, causing the chlorine atoms through a reaction to be replaced
Implementation Method 4
causing the chlorine atoms through a reaction to be replaced by one type of ions of the ionic mixture
Data Source
AI summary
The present invention discloses a method for replacing chlorine atoms on a film layer. More particularly, sufficient replacement ions for replacing the chlorine atoms are formed in a plasma process by reducing a volume ratio of a gas in a gas mixture (i.e. the film layer may be etched with the ions formed by dissociation of the gas) and dissociation of the gas mixture further decreases the etching reaction to the film layer in a process for replacing the chlorine atoms. In comparison to a conventional process by pure oxygen, the present invention can improve the prior art re-etching problem to avoid affecting an electric property of a thin film transistor, also has an advantage of manufacturing time reduction for an increased production yield.