Plasma Chamber Dry Cleaning Based on Polymer Deposit Thickness
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Solution Overview
Problem
In plasma etching processes for semiconductor manufacturing, the time required for dry cleaning (WLDC) between wafer processes is lengthy due to large polymer deposits, leading to reduced throughput and potential arcing from residual deposits.
Innovation Solution
A plasma processing method that calculates the thickness of reaction products on substrates and chamber internal members using image data from an inspection apparatus, then sets an appropriate time for dry cleaning based on these measurements to ensure thorough removal of deposits without excessive duration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the dry cleaning time is extended to remove large polymer deposits, then the cleaning effectiveness is improved, but the throughput is reduced due to lengthy processing time
Solution Approach 1:
The patent applies parameter changes by adjusting the dry cleaning time based on the measured thickness of polymer deposits. Instead of using a fixed cleaning time, the system dynamically modifies the cleaning duration parameter according to the actual deposit thickness, allowing optimal cleaning effectiveness while minimizing unnecessary processing time and maintaining throughput.
Solution Approach 2:
The patent implements feedback by measuring the polymer deposit thickness on the substrate and using this information to determine the appropriate dry cleaning time. The measurement results feed back into the process control system, which then adjusts the cleaning parameters to achieve effective removal of deposits without excessive processing time.
2Reliability
If the dry cleaning time is extended to remove residual deposits, then the occurrence of arcing is reduced, but the processing efficiency is reduced due to increased cleaning duration
Solution Approach 1:
The system changes the cleaning time parameter dynamically based on measured deposit thickness. By adjusting this parameter according to actual conditions rather than using a conservative fixed value, the system achieves sufficient arc prevention while minimizing time loss.
Solution Approach 2:
The measurement feedback mechanism allows the system to determine the minimum necessary cleaning time to prevent arcing. The feedback loop ensures that cleaning is performed long enough to remove deposits that could cause arcing, but not longer than necessary, thus preventing time loss.
3Reliability
If a fixed lengthy cleaning time is used, then all polymer deposits are removed, but the throughput is reduced and unnecessary cleaning time is wasted
Solution Approach 1:
The patent replaces the fixed cleaning time parameter with a dynamic parameter based on measured deposit thickness. This allows the cleaning time to be optimized for each specific case, ensuring complete removal when necessary while avoiding unnecessary cleaning time when deposits are minimal, thereby maintaining throughput.
Solution Approach 2:
The feedback from deposit thickness measurements enables the system to adjust cleaning time to match the actual cleaning requirement. This ensures that cleaning is performed completely enough to remove all necessary deposits without applying excessive cleaning time to cases with minimal deposits, thus preserving throughput.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach optimizes dry cleaning time, preventing arcing and improving throughput by ensuring effective removal of polymer deposits from both substrates and chamber internal members.
Implementation Method 1
performing plasma processing on a substrate introduced into a processing chamber
Implementation Method 2
acquire image data of the substrate after the plasma processing
Data Source
AI summary
A plasma processing method includes (A) performing plasma processing on a substrate introduced into a processing chamber, (B) calculating a thickness of a reaction product deposited on the substrate by (A), (C) setting a time for dry cleaning to remove a reaction product deposited inside the processing chamber by (A) based on the thickness of the reaction product deposited on the substrate calculated in (B), and (D) performing the dry cleaning for the time set in (C) in a state where the substrate is unloaded from the processing chamber.