Plasma Cleaning Gas Supply Part Segmentation
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Solution Overview
Problem
Existing cleaning methods for plasma processing apparatuses are ineffective in removing reaction products adhering to gas passages and gas supply holes, leading to defective semiconductor devices and apparatus failures.
Innovation Solution
A cleaning method that divides the gas supply part into regions with varying flow rates of process gas, using plasma to effectively clean gas passages by adjusting flow rates between different zones within the diffusion chamber, allowing radicals to efficiently reach and remove reaction products from internal surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a cleaning process is performed using plasma in a process chamber, then reaction products adhering to internal surfaces can be removed, but reaction products in gas passages and gas supply holes remain difficult to remove
Solution Approach 1:
The gas supply part is divided into multiple regions (first region and second region) corresponding to different in-plane positions of the substrate. This segmentation allows different flow rates to be applied to different regions, enabling targeted cleaning of gas passages in each region. The cleaning process is thus segmented into region-specific operations that address the unique cleaning needs of each area.
Solution Approach 2:
Different flow rates are applied to different regions of the gas supply part based on local cleaning requirements. The first flow rate is applied to the first region and the second flow rate to the second region, creating local quality variations in the cleaning process. This allows radicals to effectively reach and remove reaction products from internal surfaces of gas passages in each specific region.
2Reliability
If uniform flow rate is applied to all regions, then gas supply is simplified, but cleaning effectiveness in specific gas passages is insufficient
Solution Approach 1:
The cleaning process applies different flow rates to different regions (first region and second region) based on local cleaning requirements. This local quality approach ensures that each region receives the appropriate flow rate for effective cleaning, improving reaction product removal efficiency while avoiding unnecessary high flow rates in all regions, thus optimizing cleaning time.
Solution Approach 2:
The flow rate parameter is changed between different regions during the cleaning process. By adjusting the flow rate from the first flow rate in the first region to the second flow rate in the second region, the cleaning process adapts to local conditions, improving both cleaning effectiveness and time efficiency.
3Reliability
If high flow rate is applied to all gas passages, then cleaning coverage is improved, but gas consumption and cleaning time increase
Solution Approach 1:
Instead of applying high flow rates uniformly to all gas passages, the invention applies different flow rates to different regions based on local cleaning needs. This local quality approach ensures thorough cleaning in regions that require it while reducing gas consumption in regions with lower cleaning requirements, thus improving the ratio of cleaning thoroughness to gas consumption.
Solution Approach 2:
The cleaning process applies high flow rates (excessive action) only to specific regions where reaction products need thorough removal, rather than to all regions. This partial application of excessive flow rate ensures cleaning thoroughness where needed while minimizing overall process gas consumption.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method significantly reduces the time required for cleaning and ensures thorough removal of reaction products from gas passages and supply holes, improving the reliability of plasma processing apparatuses and reducing the risk of defects in semiconductor devices.
Implementation Method 1
a high-frequency power supply configured to convert the process gas in the space into a plasma by supplying high-frequency electric power to at least one of the holding part and the electrode plate
Implementation Method 2
cleaning a first gas passage of the plurality of gas passages corresponding to the first region with the plasma of the process gas
Implementation Method 3
allowing radicals to efficiently reach and remove reaction products from internal surfaces
Data Source
AI summary
A method of cleaning a substrate processing apparatus including a gas supply part configured to eject a process gas via gas passages formed in the gas supply part, and divided into first and second regions corresponding to first and second in-plane positions of a substrate, respectively, includes cleaning a first one of the gas passages corresponding to the first region with the plasma of the process gas by causing a first flow rate of the process gas supplied to the first region to be lower than a second flow rate of the process gas supplied to the second region and cleaning a second one of the gas passages corresponding to the second region with the plasma by causing a third flow rate of the process gas supplied to the first region to be higher than a fourth flow rate of the process gas supplied to the second region.