Plasma Cleaning Gate Assembly for Dielectric Protection
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Solution Overview
Problem
The existing plasma cleaning apparatuses for semiconductor processes face issues with contamination of dielectrics, leading to arcing and unstable plasma generation, which reduces the cleaning effect and shortens the lifespan of vacuum tubes and pumps due to metal components being applied to the inner walls, causing dielectric breakdown.
Innovation Solution
A plasma cleaning apparatus with a gate assembly and dielectric configuration that prevents metal components from contacting the inner wall during deposition, using a gate plate and actuator to switch positions and apply a driving voltage to a high voltage electrode for plasma generation, thereby preventing arcing and maintaining stable plasma discharge.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If plasma cleaning is performed continuously in the deposition section, then cleaning effect is improved, but metal components accumulate on the dielectric inner wall causing arcing and unstable plasma generation
Solution Approach 1:
The patent extracts the harmful function of the dielectric inner wall by introducing a gate structure that prevents process gas and metal components from contacting the dielectric during deposition. The gate acts as a barrier that separates the deposition zone from the dielectric surface, eliminating the contamination problem while allowing plasma cleaning to occur in the metal chamber.
Solution Approach 2:
The gate serves as an intermediary element between the process gas flow and the dielectric inner wall. During deposition, the gate blocks metal components from reaching the dielectric; during plasma cleaning, the gate can be opened to allow plasma to contact and clean the metal chamber while the dielectric remains protected.
2Reliability
If a gate structure is added to prevent contamination, then dielectric protection is improved, but device complexity increases
Solution Approach 1:
The gate structure performs multiple functions: it blocks process gas during deposition to protect the dielectric, allows plasma passage during cleaning to maintain cleaning effectiveness, and can be integrated with the existing metal chamber structure. This multi-functionality justifies the added complexity by providing both protection and operational flexibility.
3Reliability
If vacuum pump and vacuum tube are replaced more frequently, then cleaning effectiveness is maintained, but productivity decreases
Solution Approach 1:
The patent implements preliminary protection by preventing metal component accumulation on the dielectric through the gate structure during deposition. This preliminary action stops contamination before it occurs, thereby preventing dielectric breakdown and extending the operational lifespan of the vacuum tube and pump, reducing replacement frequency.
4Productivity
If plasma is generated at high power, then cleaning speed is improved, but arcing occurs due to dielectric contamination
Solution Approach 1:
The gate structure provides preliminary anti-action by blocking metal components from contaminating the dielectric before plasma cleaning begins. This prevents the condition that would lead to arcing, allowing high-power plasma to be applied safely without the risk of dielectric breakdown.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances the plasma cleaning effect, prevents dielectric breakdown, and extends the lifespan of vacuum tubes and pumps by ensuring stable plasma generation and minimizing contamination.
Implementation Method 1
a driving voltage is applied to the high voltage electrode such that plasma cleaning is performed
Implementation Method 2
plasma is generated at a specific portion of a vacuum tube to generate fluorine radicals or chlorine radicals from cleaning gas
Implementation Method 3
The gate assembly includes a gate support fixed around the first opening of the metal chamber and having a second opening, and a gate coupled to the gate support and having a first position closing the second opening and a second position opening the second opening
Data Source
AI summary
A plasma cleaning apparatus includes a metal chamber, a gate assembly, a dielectric, and a high voltage electrode.The metal chamber is connected to a vacuum tube connecting the process chamber and the vacuum pump, and is provided with a first opening. The gate assembly includes a gate support fixed to the metal chamber around the first opening and having a second opening, and a gate coupled to the gate support and having a first position closing the second opening and a second position opening the second opening switchable with each other. The dielectric is coupled to the outside of the gate support around the second opening, and the high voltage electrode is positioned on an outer surface of the dielectric.