Plasma Cleaning Semiconductor Recesses Using Carbon Dioxide
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Solution Overview
Problem
The challenge in semiconductor manufacturing lies in forming reliable devices at increasingly smaller sizes, as feature sizes decrease, making fabrication processes more difficult and complex.
Innovation Solution
A method involving the formation of a semiconductor device structure that includes a plasma cleaning process using a carbon dioxide-containing gas to remove residues and form a metal oxide layer, improving electrical properties and yield by enhancing the precision and reliability of conductive structures within the device.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency and cost are improved, but fabrication process difficulty and reliability increase
Solution Approach 1:
The patent applies preliminary action by performing a plasma cleaning process before forming the conductive structure. The plasma cleaning removes residues from the recess surface that would otherwise interfere with subsequent processing. This preliminary cleanup ensures that the conductive structure can be formed with high precision and reliability even at smaller feature sizes, addressing the fabrication reliability challenge while maintaining productivity
Solution Approach 2:
The patent utilizes parameter changes by employing plasma treatment to alter the surface properties of the recess. The plasma cleaning process changes the surface energy and chemistry of the recess walls, creating optimal conditions for subsequent material deposition. This parameter modification enables reliable conductive structure formation at reduced feature sizes without compromising fabrication efficiency
2Productivity
If feature sizes continue to decrease to increase functional density, then production efficiency and cost are improved, but manufacturing precision deteriorates
Solution Approach 1:
The plasma cleaning process is performed as a preliminary step before conductive structure formation. This preliminary action removes organic residues and contaminants from the recess surface that would otherwise compromise the precision of subsequent deposition processes. By ensuring a clean surface beforehand, the patent enables high-precision manufacturing even at smaller feature sizes
Solution Approach 2:
The patent replaces traditional mechanical or chemical cleaning methods with plasma cleaning. Plasma provides a non-contact, isotropic cleaning mechanism that can effectively remove residues from high-aspect-ratio recesses without mechanical contact. This substitution enables precise cleaning of sub-micron features that would be difficult to clean with conventional methods, thereby maintaining manufacturing precision at smaller scales
3Reliability
If plasma cleaning process is performed to remove residues and form metal oxide layer, then electrical properties and yield are improved, but process complexity increases
Solution Approach 1:
The plasma cleaning process is designed to perform multiple functions simultaneously: it removes organic residues, activates the surface for better adhesion, and forms a metal oxide layer. By combining these functions into a single process step, the patent improves electrical properties and yield without proportionally increasing process complexity. The multi-functionality of the plasma treatment justifies its inclusion in the fabrication sequence
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The plasma cleaning process effectively removes residues and forms a metal oxide layer, improving the electrical properties and yield of semiconductor devices by ensuring better conductive structure integrity and precision, addressing the complexity of smaller feature sizes.
Implementation Method 1
performing a plasma cleaning process over the dielectric layer, wherein the plasma cleaning process uses a carbon dioxide-containing gas
Implementation Method 2
The plasma cleaning process effectively removes residues and forms a metal oxide layer
Implementation Method 3
The plasma cleaning process effectively removes residues and forms a metal oxide layer
Data Source
AI summary
A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a semiconductor substrate. The method includes forming a mask layer over the dielectric layer. The mask layer has an opening exposing a portion of the dielectric layer. The method includes removing the portion of the dielectric layer through the opening to form a recess in the dielectric layer. The method includes removing the mask layer. The method includes performing a plasma cleaning process over the dielectric layer. The plasma cleaning process uses a carbon dioxide-containing gas.