Plasma Processing Device Cluster Gas Etching High Aspect Ratio
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Solution Overview
Problem
Current plasma processing devices face challenges in achieving high accuracy for etching technologies, particularly in fine-dimension openings with high aspect ratios, due to unintended spattering and accumulation of substances, which lead to insufficient processing and difficulty in maintaining precise dimensions.
Innovation Solution
Incorporating a cluster generation machine into the plasma processing device to generate cluster gas, which is used in conjunction with process gas to improve etching accuracy by performing plasma processes in the processing chamber, allowing for precise surface treatment with low damage and anisotropic etching capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional plasma processing is used for fine-dimension openings with high aspect ratios, then processing can be performed, but unintended spattering occurs and substances accumulate on inner surfaces, leading to insufficient processing and poor dimensional accuracy
Solution Approach 1:
The patent changes the physical and chemical parameters of the processing gas by using cluster gas instead of conventional monatomic gas. The cluster gas has different molecular structure, density, and reactivity parameters that reduce spattering and prevent substance accumulation, thereby improving etching accuracy for high aspect ratio structures
Solution Approach 2:
The patent introduces cluster gas as an intermediary medium between the plasma source and the substrate. This intermediary substance mediates the etching process by providing a controlled reaction environment that prevents direct harmful interactions causing spattering and accumulation, thus improving processing precision
2Manufacturing precision
If processing energy is increased to remove accumulated substances, then etching can continue, but processing dimensions become wider and minute processing becomes difficult
Solution Approach 1:
The patent changes the energy parameters by using cluster gas which requires lower processing energy to achieve effective etching. The unique properties of cluster gas allow for gentle yet effective material removal without the need to increase energy levels, thus maintaining precise dimensional control in minute structures
3Manufacturing precision
If etching is performed on high aspect ratio structures, then fine-dimension openings are processed, but substances accumulate on inner surfaces and close the openings, making etching insufficient
Solution Approach 1:
The patent changes the chemical parameters of the processing medium by using cluster gas with different molecular characteristics. This enables effective penetration into high aspect ratio structures without causing substance accumulation that would close the openings, ensuring complete and reliable etching of fine-dimension structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables improved accuracy and minimizes damage during etching processes, allowing for the successful processing of fine-dimension openings with high aspect ratios by effectively removing accumulated substances and maintaining precise dimensions.
Implementation Method 1
The cluster generation machine generates cluster gas by clustering process gas
Implementation Method 2
The plasma generation machine generates plasma of at least one of the process gas and the cluster gas in the processing chamber
Data Source
AI summary
A plasma processing device includes a stage, a cluster generation machine, and a plasma generation machine. The stage is disposed in a processing chamber. The stage may support a substrate. The cluster generation machine generates cluster gas by clustering process gas. The plasma generation machine generates plasma of at least one of the process gas and the cluster gas in the processing chamber. The plasma generation machine processes the substrate using the generated plasma.